Special Sessions on Integrated Materials

Interface Design for Advanced Ge FETs - What is Different between Ge and Si? -

Akira Toriumi
The University of Tokyo

Abstract: Ge has recently attracted much attention as one of the potential channel materials beyond Si thanks to the higher carrier mobility of bulk Ge. FET properties are, however, often irrelevant to bulk properties. In fact, the interface control is much more important for achieving well-performed FETs. In this presentation, we mainly discuss both Ge gate stack integrity and metal/Ge Schottky junction by paying attention to the Ge oxidation kinetics and the Fermi-level pinning at metal/Ge interface. These are critically important for enhancing Ge FET performance. Additionally, we would like to emphasize that the oxidation and the Fermi-level pinning are deeply linked to the interface design of any semiconductor FETs in general.