Ferroelectric Field-Effect Transistors: Logic Compatibility and Microstructure
Biography: Asif Khan is an Assistant Professor and onsemi Junior Professor in the School of Electrical and Computer Engineering with a courtesy appointment in the School of Materials Science and Engineering at Georgia Institute of Technology. Dr. Khan’s research focuses on ferroelectric devices that address the challenges faced by the semiconductor industry due to the end of transistor miniaturization. His work led to the first experimental proof-of-concept demonstration of the ferroelecric negative capacitance, which can reduce the power dissipation in transistors. His recent work includes the exploration of the reliability physics of ferroelectric field-effect transistors and metrology of ferroelectric devices. Dr Khan’s notable awards include the DARPA Young Faculty Award (2021), the NSF CAREER award (2021), the Intel Rising Star award (2020), the Class of 1934 CIOS Honor Roll award for excellence in teaching (2020), the Qualcomm Innovation Fellowship (2012), TSMC Outstanding Student Research Award (2011) and University Gold Medal from Bangladesh University of Engineering and Technology (2011).