Invited Speaker

Deep Insights of MIS-HEMT technology developments for power applications: Towards Industrialization

Blend Mohamad (LETI)

Biography: Mohamad Blend received the M.Sc. degree in Physics and Electronics engineering from Politecnico di Milano, Milan, Italy, in 2013. He joined the group of semiconductor device at AAB corporate research, Baden, Switzerland, as a training student where he worked on characterization and modeling of IGBT devices. He received his PhD at CEA-Leti and IMEP-LAHC Grenoble INP institutes, Grenoble, France, in May 2017. During this period, he focused on modelling and characterization of low dimensional silicon-on-insulator FDSOI transistors at 14nm node technology. From 2017 to 2018, he has been visitor device engineer at GlobalFoundries, Dresden, Germany, where he was implicated in the development of 12nm FDSOI technology. From 2019, he joined the power device laboratory in CEA-Leti where he is currently working on the development of power devices transistors based on III-V materials for power applications.