Short Course Speaker

GaN HEMT Technology for Power Switching Applications

Chang Soo Suh (Texas Instrument)

Biography: Chang Soo Suh received B.S. in electrical engineering from the University of Hawaii in 2003, M.S. and Ph.D. in electrical and computer engineering from the University of California Santa Barbara (UCSB) in 2006 and 2008, respectively. He joined Transphorm, Inc., Goleta, CA, USA, in 2007 as one of seven starting members responsible for demonstration of world’s first 600V-class total GaN solution for electrical power conversion application. In 2011, he joined TriQuint Semiconductor, Richardson, TX, USA in 2011 as senior GaN development engineer where he served as the principal investigator for DARPA’s Microscale Power Conversion project. In 2013, he joined Texas Instruments, Dallas, TX, USA, where he has been involved in GaN development for power switching applications. His current title is GaN development manager and senior member of technical staff. He has served on the technical program committees for International Workshop on Nitride Semiconductors (2016-2018) and International Conference on Nitride Semiconductors (2017-present).