Keynote Speaker

Distributed Polarization Doping in Power, RF and DUV III-Nitride Semiconductor Devices

Huili Grace Xing (Cornell University)

Biography: Huili Grace Xing is currently the William L. Quackenbush Professor of Electrical and Computer Engineering, Materials Science and Engineering at Cornell University, having recently served as the Associate Dean for Research & Graduate Studies of the College of Engineering.
Her research focuses on development of III-V nitrides, 2-D crystals, oxide semiconductors, recently multiferroics & superconducting materials: growth, electronic and optoelectronic devices, especially the interplay between material properties and device development for high performance devices, including RF/THz devices, tunnel field effect transistors, power electronics, DUV emitters and memories. Together with her colleague Debdeep Jena, they were the first to demonstrate distributed polarization doping (DPD), especially the p-type DPD. This doping scheme is fundamentally different from impurity doping and modulation doping, thus dubbed as the 3rd generation of doping science. Polarization doping is particularly powerful in polar ultrawide bandgap semiconductors since it might be the only known method to achieve both n-type and p-type in an UWBG semiconductor with doping properties akin to shallow impurity dopants. She has authored/co-authored 9 book chapters, 400+ journal and conference proceeding publications.
She is a recipient of the AFOSR Young Investigator Award, NSF CAREER Award, ISCS Young Scientist Award, and the Intel Outstanding Researcher Award. She is a fellow of APS, IEEE & AAAS.