DRAM (Dynamic Random Access Memory)
Biography: IN-HO NAM received the B.S. and M.S. degrees in physics from Kyungpook National University, Taegu, Korea, in 1985 and 1987, respectively, and the Ph.D. degree in electrical engineering from Seoul National University, Seoul, Korea, in 2001. From 1987 to 2011, he was with Samsung Electronics Co., Ltd., Kiheung, Korea, where he worked in the area of process integration for DRAM. He has developed and transferred to manufacturing several generations of DRAM technology. From 2011 to 2017 he was with Samsung Display Co., Ltd., Cheonan, Korea, as a Group Reader in process integration and yield enhancement for OLED. From 2017 to 2019, He was with Dongwoo Fine-Chem Co. Ltd., as an Executive Advisor. In 2020, He is currently a Professor in Electronic Engineering, Hanyang University, Seoul, Korea. Dr. Nam received the Grand Prize of Samsung Technology Award for developing the world’s 1st 256M DRAM in 1994. He has served on the Technology Committees of the Korean Society of Semiconductor & Display Technology since 2017.