Invited Speaker

Physical Modelling of Ga2O3 Schottky Barrier Diodes (SBDs)

Nouredine Sengouga (University of Biskra)

Biography: Nouredine Sengouga was born in Seggana (Batna, Algeria) in 1962. He has obtained his bachelor in Physical Electronics in 1985 from Batna University and obtained his PhD in Physical Electronics in 1991 from Lancaster University (UK). In 1992, he joined Biskra University as an Assistant Lecturer in the area of Semiconductor devices. He spent one year on leave at the University of Manchester (UK). In 2003, he has become a full Professor of Semiconductor devices. His main research interests are in the area of solar cells and other semiconductor devices (diodes and transistors).
Professor Nouredine Sengouga has supervised tens of MSc and PhD theses and produced more than 100 publications and conference presentations
He is a reviewer for several scientific journals