Invited Speaker

Prospects and Challenges in Material and Process Development of Non-Volatile Memory for In-Memory Computing

Sunghil Lee (TEL)

Biography: He obtained Ph. D in Physics from Korea Advanced Institute of Science and Technology (KAIST) in 1998. Ph. D thesis was about theoretical study for atomic and band structure of compound semiconductors. After obtaining Ph. D, he started his career at Hynix where he contributed to the research and development of DRAM. After 4 years of working at Hynix, he moved to Samsung Electronics, where he joined the process development team for DRAM and NAND Flash and contributed to many breakthroughs in Memory Cell and Transistor. He had led the diffusion process development team for Logic and led the FEOL integration for Logic 7nm. He also served as Manager of Samsung team at IMEC during 2012~2015. After 14 years of working at Samsung, he moved to TEL, where he is now serving as Director of Technology, preparing next generation technology. He has been actively participating in semiconductor research community, contributing to more than 40 conference and journal papers and serving as Process Technology sub-committee member of IEDM during 2011~2012. Current his focus is high performance computation and process development to make it happen.