Investigation of Ga2O3 Material Properties for High Power Applications
Biography: Dr. Thaddeus Asel received his B.S. in Physics from the University of Dayton in 2013 while working on graphene FETS. He went on to receive his M.S. and PhD in Physics at the Ohio State University in 2015 and 2018 respectively while working on 2D materials for optoelectronic applications and complex oxides for dielectrics. In 2018, he joined the Air Force Research Laboratory to investigate the epitaxy of Ga2O3. In 2020, he was brought on as a civil servant to lead the growth of Ultra Wide Band Gap (UWBG) technologies in the Materials and Manufacturing directorate. He has interest in the nature of defects and growth mechanisms in UWBG materials and applying those materials to high power and RF applications.