MAY 1999 ACTIVITIES
The month of April contained a very busy agenda. We squeezed-in three seminars:
(*: LEOS Distinguished Speaker, #; Joint with OSA). Details on these seminars can be found below.
We will conclude our year with the following seminar, on Tuesday May 18:
Progress in the Development of Broad-Waveguide High-Power 0.97-2.3 m m Diode Lasers and CW Room Temperature 2.3 - 2.7 m m Mid-Infrared lasers
D. Z. Garbuzov
Sarnoff Corporation CN-5300
Princeton, New Jersey, 08543-5300
Abstract:
Recent investigations demonstrate that increase of the waveguide thickness in separate confinement-heterostructure quantum-well (SCH-QW) diode lasers significantly decreases internal losses, leading to record high output powers. I will review maximum output power levels achieved in continuous wave (CW) operation for 100-200 m m wide aperture (S) lasers based on GaAs, InP and GaSb lattice-matched structures. Output powers of 16.8 W and 22.3 W at 980 nm were obtained for devices with an 200-µm wide aperture in CW and QCW operation, respectively.
In the second part of my presentation I will describe recent progress in the development of mid-infrared quantum well diode lasers which has led to the expansion of their CW-operating range up to 2.7 m m. The broad waveguide SCH QW laser diodes were grown by MBE in system InGaAsSb/AlGaAsSb using n-GaSb substrate. To achieve the longer wavelength operation and keep 1% strain in QWs the compositional values for both of In and As in QW material should be increased simultaneously. However, at wavelength exceeding l >.2.1 m m the performance of such devices suffers significantly since QW material quality degrades rapidly as the miscibility gap is approached. I will discuss structures with heavily-strained, quasi-ternary InGaAsSb(As) quantum wells. CW efficiency and powers for these lasers will be presented.
Biography:
Dmitri Z. Garbuzov graduated from the St. Petersburg State University, Russia in 1962. He received the Candidate and Doctor degrees in solid-state physics from the Ioffe Physico-Technical Institute of USSR Academy of Sciences in 1968 and 1979, respectively.
He was employed at the Ioffe Institute as a Member of Staff, Head of Injection Laser Department and Professor. In 1988 D. Garbuzov was elected a member of Russian Academy of Sciences.
D. Garbuzov has been one of the original workers in the field of AIIIBV heterojunctions and was a leading member of the team that developed first AlGaAs/GaAs diode lasers operating in continuous wave regime at room temperature. Later from 1970 to 1980 he made considerable contribution to the developmentof different types of AIIIBV heterojunction diodes with 100% radiative efficiency and new types of light emitting diodes and lasers. For this invention D. Garbuzov was awarded an International Humboldt Award (Federal German Republic).
In 1994 D. Garbuzov joined Sarnoff Corporation. In 1997 he received the Sarnoff Outstanding Achievement Award for Invention of a new type of diode laser with Broad Waveguide and the demonstration of record high-power operation of these lasers. In 1998 D.Garbuzov received the same award for development of the room temperature diode lasers with longest wavelength in the spectral range of 2.0- 2.7 m m. In the same year he was elected Senior Member of IEEE and promoted to the position of Senior Member of Technical Staff.
D. Garbuzov is an author and co-author of more than 250 technical publications, chapters in five books, including "Quantum Well Lasers," edited by P. Zory, Academic Press, 1993. He has more than 25 Russian and 3 USA patents.
Date: Tuesday May 18, 1999
Seminar: 6:30 pm Room 2460, A.V. Williams Building
University of Maryland, College Park, MD.
Dinner: 8:00 pm Chef Secret Restaurant.
Note the different Room Number. For more information and dinner reservations, please contact Dominique Dagenais at (202) 767-9347 (dagenais@ccs.nrl.navy.mil).
Directions to the seminar can be found under
https://www.inform.umd.edu/CampusInfo/Facilities/Buildings/AVW/.Femtosecond Semiconductor Optoelectronic Devices
Osamu Wada*
FESTA, Japan
Abstract:
Ultrafast optoelectronic devices will be a key to the development of telecommunication systems exhibiting a throughput beyond 1 Tb/s. This talk describes the recent progress in semi-conductors-based optoelectronic devices for the operation in the sub-picosecond and femtosecond time domain, focusing on the work being carried out in the Femtosecond Technology project. Present status and prospects of ultrashort-pulse light sources and ultrafast all-optical switches are discussed.
Recent monolithic mode-locked semiconductor lasers have exhibited a high (200 GHz) repetition rate and an ultrashort (500 fs) pulse width. A variety of ultrafast phenomena and device structures are being studied for ultrafast all-optical switches. They include ultrafast electron spin relaxation and intersubband transition in multi-quantum well (MQW) structures. A different approach using Mach-Zehnder interferometer switch structure has shown femtosecond operation. Prospects of new semiconductor materials and devices including nanostructures and quantum wires are discussed in view of the femtosecond applications.
Biography:
Dr Wada received his B. Eng. degree from Himeji Institute of Technology in 1969, his M. Eng. from Kobe University, Japan, in 1971 and his Ph.D. from the University of Sheffield, UK, in 1980.
In 1971 he joined Fujitsu Laboratories as research staff, working on GaAs devices. From 1976 to 1978 he worked at the University of Sheffield on InP growth, characterization and junction devices, then in 1978 on III-V Semiconductor optoelectronic devices including LEDs, LDs, PIN-PDs, APDs and OEICs.
In 1988 he was Research Fellow at Fujitsu Laboratories, working on interconnections and ultrafast devices.
Since 1996, Dr Wada has been Group Leader at the Femtosecond Technology Research Association (FESTA), Tsukuba, Japan, working on ultrafast devices for telecommunications.
Date: Tuesday April 6, 1999.
Seminar: 6:30 pm Room 2328, A.V. Williams Building
University of Maryland, College Park, MD.
Dinner: 8:00 pm Calvert House Inn.
NOTICE THE ROOM WAS CHANGED FROM 2460 TO 2328. For more information and dinner reservations, please contact Dominique Dagenais at (202) 767-9347 (dagenais@ccs.nrl.navy.mil). Directions to the seminar can be found under
https://www.inform.umd.edu/CampusInfo/Facilities/Buildings/AVW/.*1998-99 LEOS Distinguished Lecturer.
"Optics in the Information Age"*
Dr. Gary Bjorlund
Past President of IEEE/LEOS and OSA
President, Bjorklund Consulting, Inc.
Abstract
The role of optics in the modern age of information is already of profound importance, yet the full potential of light to transport, store, and manipulate information has just begun to be tapped. For instance, transport of information by modulated light over optical fiber links has already revolutionized the telecommunications industry and will soon have a comparable effect on the world of data communications. Yet only one tenth of one percent of the ultimate information handling capability of light has been exploited in the most aggressive experiments. In this talk, prospects for transparent "all-optical" switched communications networks, laser disk and holographic optical data storage, and free space digital optical interconnects using smart pixels will be discussed. Several specific examples from leading industrial and academic laboratories will be presented. The Optical Society of America is playing a leading role in enabling this revolution through its publication, conference, education, career development, and public policy activities. A discussion of the prospect of unifying OSA and SPIE to further these activities will be conducted.
Biography
Gary C. Bjorklund received an S.B. in Physics from MIT 1968, and an MS Applied Physics from Stanford in 1969. He served in the U.S. Army between July 1969 and June 1971. Upon returning to Stanford he joined the research group of Professor S. E. Harris, where he performed thesis research on gas-phase nonlinear optics and vacuum ultraviolet holography, receiving the Ph.D. degree in 1974.
From October 1974-January 1979, Dr. Bjorklund was a member of the Technical Staff at Bell Labs, Holmdel, where he performed research in quantum electronics and nonlinear optics. In January 1979, he joined the IBM San Jose Research Laboratory (now the IBM Almaden Research Center) as a Research Staff Member and in April 1980 assumed the first of a series of research management positions. During the period from 1979 to 1989, he managed technology development efforts in laser disk optical storage, holographic optical storage, frequency domain optical storage, and materials development efforts in organic materials for laser second harmonic generation. From August 1989 until leaving IBM in July 1994, he was Manager of Organic Optoelectronic Materials and supervised groups pursuing research on polymeric nonlinear optical materials, organic photo-refractive materials, and waveguide electro-optic devices based on polymeric nonlinear optical materials. His personal research interests while at IBM were in applications of nonlinear optics and laser spectroscopy for holography, sensitive detection, optical information storage, and optical data communications.
In July 1994 he joined the staff of Optivision, Inc. in Palo Alto, CA, where he served until February 1998 as Director of Advanced Development, with responsibility for maintaining and establishing new relationships with major government funding agencies in the photonics area and for management oversight of ongoing research in optical switching and networking, guided wave photonics, and photonic interconnects and processors. In February 1998 he joined the staff of Optical Networks, Inc., a spin-off formed to commercialize Optivisionís photonics and optical networking technology. In June 1998, he left Optical Networks to found Bjorklund Consulting, Inc.
Dr. Bjorklund is a Fellow of the Optical Society of America, of the Institute of Electrical and Electronics Engineers, and of the American Physical Society. During his career, he has co-authored over 100 technical publications and is co-holder of over 20 patents. He has just finished serving as 1998 President of the Optical Society of America. In the past, he has served as 1986 President of the IEEE Lasers and Electro-Optics Society, Program Co-Chair of CLEO 1984, General Co-Chair of CLEO 1986, and Chair of the 1995 OSA Annual Meeting.
He has been a member of several important advisory committees, including the recent National Research Council Committee on Optical Science and Engineering.
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Date: Tuesday April 20, 1999
Time: 6:00 pm: Social hour/Networking, Pay-as-You-Go Bar
6:30 pm: Dinner (advanced reservations required)
7:45 pm: Lecture
Location: Mr. Smith's of Georgetown, 8369 Leesburg Pike (Route 7),
Mc Lean, VA
* This is a joint meeting with the Optical Society of America, National Capital Section.
This seminar is the OSA/NCS 1999 Presidential Lecture.
<<<<<DINNER MENU>>>>>
Choice of:
London Broil $15
Spicy Pecan Chicken $16
Grilled Coho Salmon $17
NOTE: The restaurant reserves the right to make last minute menu changes.
Dinner includes vegetable, salad, dinner rolls, beverage. The price includes tax and tip.
[There is a $2 surcharge for those who are not current members of either NCS/OSA or the Wash/NVA chapter of LEOS]. Alcoholic beverages and desserts are extra.
---> RESERVATIONS (with menu selection) REQUIRED FOR DINNER <----
(by Friday April 16, 1999)
Note: You can just attend the lecture after the dinner.
To make reservations or for more information please contact:
Dominique Dagenais at (202) 767-9347 (dagenais@ccs.nrl.navy.mil) or
John Hornstein at (202) 767-0766 ( hornstei@poamb.nrl.navy.mil).
>>>>>>> DIRECTIONS <<<<<<<<<
Directions to Mr. Smith's of Georgetown Restaurant:
From the Capital Beltway (I-495) in Virginia: Use Exit 10 westbound on Leesburg Pike (Route 7). Proceed a mile or so on Route 7 passing under Route 123 (Chain Bridge Road). The Pike 7 Plaza is on your left after passing a small shopping center called the Tysons Square Center. Turn left at the second traffic light after Route 123 onto Gosnell Road.
NOTE: This road is named Westpark Drive to the right of Route 7. Mr. Smith's is in the Pike 7 Plaza on your left at the end near Crown Books and a Pier 1 store. Turn left off of Gosnell Road into the Pike 7 Plaza.
Quantum Wells and Quantum DotsLasers:
From Strained-Layer and Self-Organized Epitaxy to High-Performance Devices
P. Battacharya*
University of Michigan
Abstract:
Lasers with strained quantum well active regions have demonstrated superior performance in terms of gain threshold current, and modulation bandwidth. Even better performance is expected of Lasers with quantum dot active regions due to the singular density of states in these low-dimensional quantum confined media. Quantum dots (QD) realized by etching have demonstrated limited success in terms of Laser performance due to the high density of etch-induced damage. On the other hand, self-organized growth of highly strained semoconductor quantum dots has emerged as a powerful and convenient etchnique of realizing an ordered array of quantum dots.
Techniques to overcome the bottleneck imposed by the electron-hole scattereing rate will be described. Techniques to vary dot size and density and emission wavelength of Lasers will be described. The properties of QD electro-optic modulators will also be described.
The talk will focus on the growth and properties of self-organised quantum dots and the characteristics of devices described above. Comparisons will be made with performance of the best quantum well devices.
Biography:
Pallab Battacharya (M'78-SM'83-F'89) received the Ph.D. degree from the University of Sheffield, UK, in 1978. He is professor of Electrical Engineering and Computer Science and Director of the Solid state Electronics Laboratory at the University of Michigan, Ann Arbor. His teaching and research interests include liquid-phase and molecular beam epitaxy of elemental and III-V compound semiconductors, material characterization, elctronic and optolectronic devices, and optoelectronic integrated circuits. He was on the faculty of Oregon State University, Corvallis, from 1978 to 1983, and since 1983 he has beeen with the University of Michigan.He was an invited professor ta the Ecole Polytechnique de Lausanne, Switzerland, from 1981 to 1982. He has published over 300 technical articles in archival journals. he is the author of the etxtbook "Semiconductor Optoelectronic Devices" (Prentiss Hall, 1994, 1st ed. and 1997, 2nd. Ed.
Date: Thursday April 29, 1999
Seminar: 6:30 pm Room 2328, A.V. Williams Building
University of Maryland, College Park, MD.
Dinner: 8:00 pm Chef Secret Restaurant.
Note the different Room Number. For more information and dinner reservations, please contact Dominique Dagenais at (202) 767-9347 (dagenais@ccs.nrl.navy.mil).
Directions to the seminar can be found under
https://www.inform.umd.edu/CampusInfo/Facilities/Buildings/AVW/.* 1998-99 LEOS Distinguished Lecturer.
National capital Area Annual Awards Banquet
Date: Saturday April 24, 1999
Location: Bolling Air Force Base oficer's Club
Agenda: 6:30 pm Cocktails
7:30 pm Dinner
8:30 pm Award Ceremony
For registration and information, please contact Jackie Hunter at (703) 803-8701 or j.hunter@ieee.org.