Modern
solid-state photonic devices often rely on properties created through
deliberate engineering.
While impurity doping represents the simplest example of extrinsic property modification,
it is often the modification of intrinsic properties that allows for the most flexibility
in “designed” materials. This seminar
will discuss how nanostructing in all three spatial
dimensions can change the optical properties of certain direct-gap semiconductors
to enable optical absorption in the mid-wave to long-wave infrared regions of
the electromagnetic spectrum. The
resulting structures are often referred to as quantum
dots. We illustrate the success of
this process by presenting preliminary results of
linear arrays of infrared detectors that could potentially be used in the fabrication
of focal plane imagers for night vision and other imaging applications. The unique
feature of these devices is their ability to operate at temperatures up to 200
K—thus
suggesting the possibility of non-cryogenic imaging systems.
https://ieee.creol.ucf.edu/
Speaker: Prof. Elias Towe (ECE, Carnegie
Mellon University)
Time and location:
CREOL103/102, 12:30 pm, Friday, Dec. 9rd, 2005
All current and
prospective members of IEEE/LEOS
are invited to attend and enjoy FREE
PIZZA !
Semiconductor
quantum structures for infrared photodetection
Abstract
Design: Yi-Hsin Lin
Contact Yi-Hsin Lin, President of LEOS Student Chapter. (yilin@mail.ucf.edu or 407-823-4965 )
Chapter advisor:
Prof. Shin-Tson Wu