Title: MOS Field-Effect Transistor is Bipolar. Device Theory and Circuits Authors: Chih-Tang Sah (Univ. Florida) and Bin B. Jie (Peking University) Abstract Field-effect transistor (FET) was conceived 80 years ago by Lilienfeld in his 1926-1932 patents [1]. Shockley, 55-years ago in 1952 [2], invented the volume-channel FET using two opposing p/n junctions as the two gates on the two surfaces of a thin semiconductor film to control the conductance of the thin-film's volume-channel. Atalla and Kahng in 1960 [1] experimentally demonstrated the surface-channel FET using a single metal-conductor (aluminum) on thin oxide-insulator (SiO2) as the gate on a thick silicon (MOS or MIS gate) to control the surface-channel conductivity of the thick silicon, commonly known as the Metal-Oxide-Silicon Field-Effect Transistor (MOSFET or MOST [1]). Wanlass, Sah and Moore [3, 4] reported at the 1961 International Solid-State Circuits Conference and the 1962 European Microwatt Circuit Conference the low stand-by micropower voltage inverter circuit using two opposite-polarity MOSTs, an electron (nMOST) and a hole (pMOST) surface inversion channel FET, known as the CMOS or CMOS circuit. The initial computer-aided circuit design simulator, the Berkeley SPICE [5, 6], employed Sah's 1964 constant gate-threshold-voltage MOSFET model [7], which was improved in the 1966 Sah-Pao theory [8] to take into accourt of the voltage-dependent gate threshold-voltage arisen from impurity ions in the surface channel and used in SPICE-2. These were the 25% FET theory since they included only the drift current of one carrier species, missing the diffusion current and the second carrier species, electrons or holes. They are 12.5% theory if the two locations of the electrical current conduction channel, volume and surface, are included in the classification of the FET. Diffusion current was added in the 1966-Pao-Sah theory [9] which gave the 50% or the Unipolar FET (UniFET) theory. Recently (March 2007 [10]) we discovered the simultaneous presence of both electron and hole currents in the experimental data of the latest nanometer FETs with dual-MOS gates on thin-base silicon, known as the FinFET. This led us to the development of the 100% theory for the Field-Effect Transistor which we coined as the Bipolar Field-Effect Transistor (BiFET) to provide the Compact Modeling Community [6] the bench mark model to test the accuracy of their compact models for current and future nanometer silicon MOSFETs. This new discovery doubles, at least, the Moore's Law on function density without using the next generation technology of smaller-dimension lithography. This presentation summarizes the history and progresses of our efforts on developing the bench mark theory of the BiFET which have been reported in monthly journal articles [10-20]**. __________________________________________________________________________________________ *This theory and the one-transistor basic-building-block circuits were first presented by us as two invited Late News at the Workshop on Compact Modeling (WCM), May 23, 2007, Santa Clara Convention Center, California [10]. Our follow-up theoretical analyses of the electrical characteristics for bench-mark of the 2-MOS-gate thin pure-silicon base BiFETs were published [10-20] and described in 7 invited presentations and keynotes at international conferences and a recent seminar. We plan to release the presentation slides and talkscripts on an UFL Gatorlink website. ** Articles [10-20] can be downloaded, free of charge, from the Website of the Chinese Journal of Semiconductors of the Chinese Academy of Sciences and the Chinese Electronics Society. Since January 1, 2008 this journal has returned to it original name, Journal of Semiconductors, and it no longer accepts manuscripts in Chinese, only English. [1] Chih-Tang Sah, "Evolution of the MOS Transistor – From Conception to VLSI," Invited Paper, IEEE Proc. 76(10), 1280-1326, October 1988, and references cited. [2] William Shockley, "A Unipolar 'Field-Effect' Transistor," Proc IRE 40(11), 1365-1376, November 1952. [3] Frank Wanlass and Chih-Tang Sah, "Nanowatt Logic Using Field-Effect Metal-Oxide-Semiconductor Trodes,' IEEE Solid-State Circuit Conference Proceedings, 32-33, February 20, 1963. [4] Gordon E. Moore, Chih-Tang Sah, and Frank Wanlass, "Metal-Oxide-Semiconductor Field-Effect Devices for Micropower Logic Circuitry," 41-55, in Micropower Electronics, Edited by Edward Keonjian, Perggamon Press, New York, 1984. [5] Chih-Tang Sah and Bin B. Jie, "A History of the MOS Transistor Compact Modeling," Keynote at Workshop on Compact Modeling, (WCM). Proceedings, pp 1-2 and pp 349-390, May 2005. [6] Joseph Watt, Colin McAndrews, C. Enz, Carlos Galup-Montoro, Gennday Gildenblatt, Chenming Hu, R. van Langevelde, Mitiko Miura-Mattauch, R. Rios, and Chih-Tang Sah, "Advance Compact Models for MOSFETs," Invited paper at Workshop on Compact Modeling (WCM). Proceedings, pp 3-12, May 2005. [7] Chih-Tang Sah, "Characteristics of the Metal-Oxide-Semiconductor Transistors," IEEE Tran Elec Dev. 11(7), 324-345, July 1964. [8] Chih-Tang Sah and Henry C. Pao, "The Effects of Fixed Bulk Charge on the Characteristics of Metal-Oxide-Semiconductor Transistor," IEEE Tran Elec Dev. 13(4), 410-415, April 1966. [9] Henry C. Pao and Chih-Tang Sah, "The Effect of Diffusion Current on the Characteristics of MOS Transistors," Solid-state Electronics 9(10), 927-938, October 1, 1966. [10] Chih-Tang Sah and Bin B. Jie, "Bipolar Theory of MOS Field-Effect Transistors and Experiments," Chinese Journal of Semiconductors 28(10), 1534-1540, October 2007. [11] Chih-Tang Sah and Bin B. Jie, "The Bipolar Field-Effect Transistor: I. Electrochemical Current Theory (Two-MOS-Gates on Pure-Base),"Chinese Journal of Semiconductors 28(11), 1661-1673, November 2007. [12] Chih-Tang Sah and Bin B. Jie, "The Bipolar Field-Effect Transistor: II. Drift-Diffusion Current Theory (Two-MOS-Gates on Pure-Base),"Chinese Journal of Semiconductors 28(12), 1849-1859, December 2007. [13] Binbin Jie and Chih-Tang Sah, "The Bipolar Field-Effect Transistor: III. Short Channel Electrochemical Current Theory (Two-MOS-Gates on Pure-Base)," Journal of Semiconductors 29(1), 1-11, January 2008. [14] Binbin Jie and Chih-Tang Sah, "The Bipolar Field-Effect Transistor: IV. Short Channel Drift-Diffusion Current Theory (Two-MOS-Gates on Pure-Base)," Journal of Semiconductors 29(2), 193-200, February 2008. [15] Chih-Tang Sah and Binbin Jie, "The Theory of Field-Effect Transistors: XI. The Bipolar Electrochemical Currents (1-2 MOS0Gates on Thin-Thick Pure-Impure Base)," Journal of Semiconductors 29(3), 397-409, March 2008. [16] Chih-Tang Sah and Binbin Jie, "The Theory of the Field-Effect Transistor: X. The Bipolar Fundamental Physics and Theory (All Device Structures)," Journal of Semiconductors 29(4), 613-619, April 2008. [17] Binbin Jie and Chih-Tang Sah, "The Bipolar Field-Effect Transistor: V. Bipolar Electrochemical Current Theory (Two-MOS Gates on Thin-Gate)," Journal of Semiconductors 29(4), 620-627, April 2008. [18] Binbin Jie and Chih-Tang Sah, "The Theory of Field-Effect Transistors: XII. The Bipolar Drift and Diffusion Currents (1-2-MOS-Gates on Thin-Thick Pure-Impure Base)," Journal of Semiconductors 29(7), 1227-1241, July 2008. [19] Binbin Jie and Chih-Tang Sah, "The Bipolar Field-Effect Transistor: VI. The CMOS Voltage Inverter Circuit (Two-MOS-Gates on Pure-Base)," Journal of Semiconductors 29(11), 2079-2087, November 2008. [20] Binbin Jie and Chih-Tang Sah, "The Bipolar Field-Effect Transistor: VII. Physical Realizations of the Transistor and Basic Building Block Circuits (Two-MOS-Gates on Pure-Base)," Journal of Semiconductors 30(2), February 2009. About the Speakers Binbin Jie received the B. S. and M. S. degrees, both in Physics from the Peking University, China; and the Ph. D. degree in Electrical Engineering from the National University of Singapore. He was employed for 5 years by the Chartered Semiconductor Manufacturing Company of Singapore, and led its company-wide front-end reliability engineering group which was responsible for all the products delivered to the customers. He started the collaboration with Professor Sah in 2001 via internet and joined Sah's laboratory at the University of Florida in 2003. In 2006, he accepted the 3-year Graduate Research Professor appointment at the Institute of Microelectronics, Peking University,China. He has developed the analytical Foundation Models for the surface inversion channel MOS field-effect transistors to serve as the benchmark for compact modeling of state-of-the-art silicon MOS field-effect transistors. In the last twenty months, since March 2007, he has been developing the Foundation Model theory for the nanometer Bipolar MOS Field-Effect Transistors, including the FinFET, and their one-transistor basic-building-block circuits. Chih-Tang (Tom) Sah has been learning radio and semiconductor electronics for 70 years and contributing to semiconductor device physics and technology for 50 years with his 50 PhD students and more than 50 industrial and academic postdoctoral associates and visiting professors. He has been a Graduate Research Professor and an Eminent Scholar at the University of Florida for 20 years starting on August 21, 1988. For 25 years prior to Florida, he was a Professor of Physics and Professor of Electrical and Computer Engineering at the University of Illinois in Urbana-Champaign. Before Illinois, he directed and helped hire and trained, under the direction of Gordon Moore, the 64-person team of the Physics Department of the Fairchild Semiconductor Research Laboratory which developed the first generation silicon integrated circuit technology. Those he hired and brought into silicon transistor technology included Andy Grove later the Intel CEO and Chairman, and Frank Wanlass the CMOS circuit inventor. Prior to Fairchild, Tom Sah apprenticed for three years with the transistor inventor, William Shockley, and worked with Robert Noyce and Gordon Moore at the Shockley Semiconductor Laboratory, which provided the background to enable him to switch from his PhD research in microwave travelling vacuum tubes at Stanford University to semiconductors and transistor manufacturing at Shockley and Fairchild. He received two BS degrees, in Physics and in Electrical Eingineering, from the University of Illinois at Urbana-Champaign in 1953, and the PhD degree from Stanford in 1956. He wrote a 3-volume textbook titled Fundamentals of Solid-State Electronics (FSSE) in 1991 and is the Founding Editor of the International Series on Advances in Solid State Electronics and Technology (ASSET), both published by the World Scientific Publishing Company. This series has recently been publishing seven monographs by invited authors on compact transistor modeling for computer-aided design of integrated circuits. Sah was named a world's 1000 most-cited scientists during 1963 to 1978 by the Institute of Scientific Information (ISI). He is a Life Fellow of the IEEE, the American Physical Society and the Franklin Institute of Philadelphia, and a Fellow of American Association of the Advancement of Science. His semiconductor research and teaching contributions were recognized three times by the IRE-IEEE: the Browder J. Thompson Prize for the best paper published by an author under thirty year-old, the J. J. Ebers award and the Jack Morton award. He was honored twice by the semiconductor industry, the co-recipient, with Taiwan's TSMC-Chairman Morris Chang, the First Achievement Award in High Technology from the Asian-American Manufacturing Association in San Jose, California, and the recipient of the Fourth annual University Research Award of the Semiconductor Research Corporation (SRC) and the Semiconductor Industry Association (SIA). He was the co-recipient in integrated circuit technology, with the father of bioenginering, Professor Yung-Cheng Fung, of the first Pioneer Recognition Award of the Committee-of-100 (a Chinese-American-Citizen organization with Yo-Yo Ma one of its Founders). Tom Sah received the second annual Distinguished Lifetime Achievement Award of the Asian-American Engineer of the Year sponsored by the Chinese Institute of Engineerings/USA. He was elected an Academician of the US National Academy of Engineering, the Academia Sinica in Taipei and the Chinese Academy of Sciences in Beijing. His current research is in collaboration with Professor Bin Jie on MOS field-effect transistor models for nanometer technologies. Regards, Slavica Malobabic, University of Central Florida, PhD student, IEEE EDS Chapter Chair, 321 609 1851 smalobabic@ieee.org