V.A. Vashchenko "System level and hot plug-in ESD specs and solutions" University of Central Florida HEC 101 01/ 23 from 12:30 to 2pm ********************************************************************************************************* Abstract: Presentation provides a general level overview for the specific of system level Electrostatic Discharge (ESD) protection specification, test and design methodologies followed by review of the product cases and new ESD devices developedfor applications with system spec level pins. Review of physical principles of new high voltage lateral PNP transistor, two-stage PNP transistor, dual direction devices is presented in support of IEC and ISO standards , custom hot plug-in and automotive specifications. Finally, Human Metal Model (HMM) wafer level tools are described as a future methodology trend to support the device level design of the system solution. ******************************************************************************************* Bio of Dr. Vladislav Vashchenko Dr. Vladislav Vashchenko received MS, Engineer-Physicist (1986) followed by Ph.D. in Physics of Semiconductors (1990) from Moscow Institute of Physics and Technology for the study of self-organization phenomena in semiconductor structures under breakdown and injection. He was awarded the degree Doctor of Science in Microelectronics (1997) (similar to Habilitation in Germany) for the cycle of studies of physical limitation of safe operating area in discrete power and microwave GaAs and Si devices, developed test methods for local structural defects detection and solutions of the reliability problems. He joined National Semiconductor Corp. in 2000. Since 2006 he is a technical leader and manager of the process development ESD group. His group focus is corporate ESD development for new processes and lead products involving a wide spectrum of the experimental and numerical simulation tools. He also acts as one of the leaders in several university projects the project with IMEC. His current research interests are focused on the design of ESD solutions, power devices, reliability, ESD compact models, and innovation of integrated galvanic isolation using silicon light emission structures. He is a member of technical committees for IRPS and EOSESD Symposiums. His studies regularly presented in major device research forums. He is author of over 80 research papers, over 100 U.S. patents and co-authored book Physical limitation of semiconductor devices. Regards, Slavica Malobabic, University of Central Florida, PhD student, IEEE EDS Chapter Chair, 321 609 1851 smalobabic@ieee.org