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Technical Seminar


The Future of Electrical I/O for Microprocessors

DATE/TIME  Friday, October 22, 2010 (10:00am to 12:00pm)
PLACE  AMD Fort Collins Campus (Fort Collins, CO)
DIRECTIONS

From I-25, take Harmony Road Exit (Exit 265) westbound, and enter AMD campus on right immediately following Harmony/Ziegler intersection.  AMD is located on the NW corner of Harmony Road and Ziegler Road.  Proceed to 3rd floor for escort to seminar auditorium.  Non-AMD employees:  please arrive at 9:45am for security sign-in and escort.

COST    Free.  As always, food & drinks will be provided.
RSVP    Send e-mail to visvesh.sathe@amd.com.

ABSTRACT
High-speed CMOS microprocessor I/O has scaled aggressively over the past decade in terms of power and performance largely due to advances in equalization and clocking techniques. Future multi-core processors will likely require I/O bandwidth exceeding 1TB/s along with dramatically improved power efficiency. However, there has been some question about whether electrical I/O will continue to satisfy chip-to-chip communication requirements over the next decade. This presentation describes how electrical signaling techniques can be scaled in terms of power, performance, and density to enable the next several generations of microprocessor-based systems and applications. Innovative circuit architectures will facilitate link energy efficiency better than 1pJ/bit while mitigating the increasing variation within scaling CMOS processes. Transitioning from legacy channels to new interconnect topologies and materials will significantly improve the power/performance/density tradeoff. Statistical link-level design tools that allow designers to rapidly quantify high-level architecture tradeoffs will promote balanced link designs that co-optimize power, performance, and channel topology. To support these link scaling predictions, the design and measurement results for a recent 470Gb/s chip-to-chip link prototype operating with 1.4pJ/bit energy efficiency will also be discussed.

PRESENTATION SLIDES pdf


DR. FRANK O'MAHONY (Intel, Hillsboro, OR)

Frank O’Mahony received the BS, MS, and PhD degrees in electrical engineering from Stanford University in 1997, 2000, and 2004, respectively. Since 2003, he has been with Intel’s Circuit Research Laboratory in Hillsboro, OR. His research at Intel focuses on high-speed and low-power data links, clock generation and distribution, and design techniques for low-noise, variation-tolerant clocking and signaling circuits. Frank has received the ISSCC Jack Kilby Award and the TCAS Darlington Best Paper Award.


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