Upcoming Event: Technical Seminar

Dates: August 16, 2018

Location: Geometrics

Meeting Room
2190 Fortune Drive
San Jose, CA 95131
By August 15, 2018


Near-Field Scanning: Searching for Root Causes


Hamed Kajbaf

Hamed Kajbaf received the PhD in electrical engineering from Missouri University of Science and Technology in 2012. He has previously worked at SpaceX as EMC Design Engineer. He is currently a Principal EMC Engineer at Amber Precision Instruments, San Jose, CA. His research interests include EMC and RF instrumentation, EMC and microwave scanning systems, near-field electromagnetic measurement, and array signal acquisition/processing.


Sniffer probes are conventionally used for localizing the sources of radiated emissions from electronic boards and systems. However, EMC engineers know from experience that hot areas, identified by the sniffer probes, do not necessarily correlate with radiated emissions test results. Emission source microscopy (ESM) scanning technology is a powerful tool to identify the radiated emission sources. In this scanning technology, the measurement is performed in “radiative” near-field (Fresnel) region as opposed to conventional near-field scanning which is usually performed in “reactive” near-field region. The phase-resolved measurement technique used in ESM helps with back-calculating the field to board or system surface to localize the contributing sources. This talk also covers the near-field effects of electrostatic discharge (ESD) and how near-field scanning can be used to identify root causes of ESD failures per ANSI/ESD SP14.5-2015. The correlation between IEC 61000-4-2 and ANSI/ESD SP14.5-2015 will be discussed.

Meeting Agenda

6:00 PM to 6:30 PM Check in
6:30 PM to 7:30 PM Presentation
7:30 PM to 7:45 PM Comments and Conclusions


Brian Lee and Rahul Mhaskar


Both IEEE members and non-members are welcome. Admission is free.

By August 15, 2018


Yeou Song (Brian) Lee
brian.lee at