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Technical
Seminar
Distinguished Lecturer Series |
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Wideband RF CMOS Circuit Design Techniques |
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DATE/TIME
Wednesday, May 5, 2010 (3:30pm to 5:30pm) |
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PLACE
AMD Fort Collins Campus (Fort
Collins, CO)
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DIRECTIONS
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From I-25, take Harmony Road Exit (Exit 265) westbound, and enter AMD
campus on right immediately following Harmony/Ziegler intersection.
AMD is located on the NW corner of Harmony Road and Ziegler Road.
Proceed to 3rd floor for escort to seminar auditorium. Non-AMD
employees: please arrive at 3:15pm for security sign-in and escort. |
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COST
Free. As always, food &
drinks will be provided. |
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RSVP
Send e-mail to
visvesh.sathe@amd.com. |
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ABSTRACT |
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With the Federal Communications Commission
(FCC) opening the 3.1-10.6GHz spectrum for Ultra Wide Band (UWB)
operation, research has been conducted on wideband RF circuit design.
How do we design a low-noise amplifier (LNA) which covers a bandwidth of
3 to 9GHz while achieving low noise figure and high linearity? Similar
questions can be raised for the power amplifier (PA) and RF mixers.
Recently, these questions become even more important as Software Design
Radio (SDR) pops up as a possible solution to the ever increasing
multi-mode multi-band mobile communication terminal demand.
The related question is
obvious: does deep submicron CMOS bring some benefits or is BiCMOS
favorable? |
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PRESENTATION SLIDES
pdf |
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DR. DOMINE
LEENAERTS (NXP,
Eindhoven, The Netherlands)
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Domine
Leenaerts (M’94-SM’96-F’2005) received the PhD.degree in electrical
engineering from Eindhoven University of Technology, Eindhoven, the
Netherlands, in 1992.From 1992
to 1999, he was with Eindhoven University of Technology as an Associate
Professor with the Micro-electronic Circuit Design group. In 1995, he
was a Visiting Scholar with the Department of Electrical Engineering and
Computer Science, University of California, Berkeley. In 1997, he was an
Invited Professor at Ecole Polytechnique Federale de Lausanne,
Switzerland. From 1999 to 2006 he has been a Principal Scientist with
Philips Research Laboratories, Eindhoven, where he is involved in RF
integrated transceiver design. In 2006, he moved to NXP Semiconductors,
Research as Senior Principal Scientist, still working in the same
field. Since 2010 he leads the RF Advanced Development Team in NXP
Research. |
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He has published over 150 papers in scientific
and technical journals and conference proceedings. He holds several US
patents. He has coauthored several books, including Circuit Design
for RF Transceivers (Boston, MA: Kluwer, 2001). Dr. Leenaerts served as Associate
Editor of the IEEE Transactions on
Circuits and Systems-Part I (2002-2004) and is since 2007
Associate Editor of the IEEE
Journal of Solid-State Circuits. He was in the period 2005-2008
the IEEE Circuits and Systems Society Member representative in the IEEE
Solid-State Circuits Society Administrative Committee on which he is now
an elected member. Dr. Leenaerts serves currently on the Technical
Program Committee of the European Solid-State Circuits Conference, the
IEEE Radio Frequency Integrated Circuits (RFIC), and IEEE International
Solid-State Circuits Conference (ISSCC). |
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