Download the IEEE IMW 2025 technical program (rev11)
Tutorials
 
Advanced DRAM and HBM
Speaker
Affiliation
Topic
Gaurav Thareja
Applied Materials
Process and Materials for HBM
Hans (Han Suk) Ko
SK Hynix
Devices and circuits for HBM
Ram Gummadi
NVIDIA
HBM for GPU and HPC
 
Emerging Memory
Speaker
Affiliation
Topic
Kai Ni
University of Notre Dame
Rethinking Vertical NAND: How Ferroelectrics Can Potentially Change the Game
Mattia Boniardi
ST Microelectronics
Embedded Phase Change Memory: From Device Physics to AI-oriented Applications
Enrico Piccinini
Applied Materials
Simulation-driven Material Engineering for Memory Devices

Keynotes
 
Speaker
Affiliation
Presentation title
Krishnan Subramanian
Micron
NAND Flash Innovation in the AI Era
Su Jin Ahn
Samsung
Future Technology Outlook on DRAM/Flash Memories for More Moore and More Than Moore
Dmitri Strukov
UCSB
Controlling ReRAM’s Switching Characteristics with Shadow Memory for Continual Learning

Invited Talks
 
Speaker
Affiliation
Topic
Onur Mutlu
ETH Zurich
Memory-Centric Computing: Solving Computing’s Memory Problem
Steven Lemke
SST
Reliability and Accuracy of a Qualified Split-Gate Flash In-Memory Compute Technology
Sidney Tsai
IBM
Analog AI Accelerators for Transformer-based Language Models: Hardware, Workload, and Power Performance
John Sung
MXIC
Enhancing 3D XPT/SOM Reliability: Strategies for Mitigating Spike Current and Improving Read Endurance
Syed M. Alam
Everspin
STT-MRAM Antifuse Macro for Memory, SoC, and FPGA Chips
Asif Khan
Georgia Tech
Ferroelectric Field-Effect Transistor Technology