Paper Awards

Best Paper Awards

3rd Place

Hidehiro Asai, Shota Iizuka, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Kimihiko Kato, Hiroyuki Ota, Takahiro Mori; National Institute of Advanced Industrial Science and Technology (AIST), Japan

Development of Integrated Device Simulator for Quantum Bit Design: Self-Consistent Calculation for Quantum Transport and Qubit Operation

2nd Place

Yuta Aiba, Hitomi Tanaka, Takashi Maeda, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Toshio Fujisawa, Mie Matsuo; Kioxia Corporation, Japan

Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling with 6-Bit per Cell (HLC) and Beyond

1st Place

Sang-Woo Han , Jianan Song ,Rongming Chu; Pennsylvania State University, USA

GaN Super-Heterojunction Schottky Barrier Diode with over 10 kV Blocking Voltage

Best Student Paper Awards

3rd Place

Qiumeng Wei¹, Jianshi Tang^1,2, Xinyi Li¹ , Yanan Zhong¹ , Bin Gao^1,2, He Qian^1,2, Huaqiang Wu^1,2; ¹ Institute of Microelectronics, Tsinghua University, China, ²Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, China

Artificial Neuron with Spike Frequency Adaptation Based on Mott Memristor

2nd Place

Shunjie Yu¹, Mengfan Ding¹ , Wenxiang Mu², Zhitai Jia², Xiaohu Hou¹, Zhongfang Zhang¹, Pengju Tan¹, Xiaolong Zhao¹, Guangwei Xu¹, Shibing Long¹; ¹University of Science and Technology of China, China; ²Shandong University, China

β-Ga₂O₃ Micro-Flake FET SBPD with Record Detectivity of 3.87×10¹⁷ Jones for Weak Light Detection

1st Palce

Nianying Wang^1,2,3, Ruofeng Han^1,3, Changnan Chen^1,3, Jiebin Gu^1,3, and Xinxin Li^1,2,3; ¹Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China; ²ShanghaiTech University, China; ³University of Chinese Academy of Sciences, China

Double-Deck Metal Solenoids 3D Integrated in Silicon Wafer for Kinetic Energy Harvester

Best Interactive Paper Awards

3rd Place

Peiwen Huang¹, Lei Yin¹, Yayao Li¹, Yue Wang¹, Deren Yang^1,2, Xiaodong Pi^1,2; ¹State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, China,²Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, China

Optoelectronic Synaptic Devices Based on the Heterostructure of Silicon Nanomembrane and P3HT

2nd Place

Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya; Hitoshi Wakabayashi Tokyo Institute of Technology, Japan

WS₂ pMISFETs by Sputtering and Sulfur-Vapor Annealing with TiN/HfO₂-Top-Gate-Stack, TiN Contact and Ultra-Thin Body and Box

1st Place

I. Oshiyama, T. Shigetoshi, I. Mita, N. Sumitani, T. Oinoue, S. Saito, T. Okawa, Y. Ebiko, K. Yokochi, Y. Kitano, Y. Hagimoto, T. Hirano, H. Iwamoto; Sony Semiconductor Solutions Corp., Japan

Visible Light Sensitivity Enhancement of CMOS Image Sensor with Pseudo High Refractive Index Film Integrated by Directed Self-Assembly Process

Paper Awards Ceremony

Best Student Paper Awards

Best Student Paper Award: Qiumeng Wei

Best Student Paper Award: Shunjie Yu

Best Student Paper Award: Nianying Wang

Best Interactive Paper Award: Peiwen Huang