Information of EDTM 2021 Presentions

Oral Sessions

Paper ID	Presenting Author	Title	Email
Session 1 (WE1P1)
WE1P1-1	Bruno Grandidier	Pushing the Limit of Lithography for Patterning Two-Dimensional Lattices in III-V Semiconductor Quantum Wells	bruno.grandidier@univ-lille.fr
WE1P1-2	Xiaoming Xie	Graphene Synthesis: From Single Crystalline Wafer to Edge Specific Nano-Ribbon	xmxie@mail.sim.ac.cn
WE1P1-3	Jeehwan Kim	Artificial Heterostructures Enabled by Remote Epitaxy	jeehwan@mit.edu
WE1P1-4	Yan Liu	Non-Volatile FETs with Amorphous (Al2O3, HfO2, ZrO2, Etc.) Gate Insulators	xdliuyan@xidian.edu.cn
WE1P1-5	Ilya Sychugov	Silicon Nanocrystals: Fabrication, Physical Properties and Applications	ilyas@kth.se
Session 2 (WE1P2)
WE1P2-1	Muhammad A Alam	Hot Carrier Degradation in Classical and Emerging Logic and Power Electronic Devices: Rethinking Reliability for Next-Generation Electronics	alam@purdue.edu
WE1P2-2	Li Lu	Hot-Carrier-Induced Reliability Concerns for Lateral DMOS Transistors with Split-STI Structures	lul325@126.com
WE1P2-3	Qi Hu	Identifying Relaxation and Random Telegraph Noises in Filamentary Analog RRAM for Neuromorphic Computing	huqi2020@mail.tsinghua.edu.cn
WE1P2-4	Lindong Wu	Nonlinear Weight Quantification for Mitigating Read Disturb Effect on Multilevel RRAM-Based Neural Network	wulindong@pku.edu.cn
WE1P2-5	Ephraim Suhir	Predicted static fatigue lifetime of silica optical interconnects: application of Boltzmann-Arrhenius-Zhurkov (BAZ) model	suhire@aol.com
Session 3 (WE1P3)
WE1P3-1	John Dallesasse	Heterogeneous Integration for Silicon Photonic Systems: Challenges and Approaches	jdallesa@illinois.edu
WE1P3-2	Lingyue Tan	Effect of Leveler on Electrical Resistance and Microstructural of Electroplated Copper After Heat Treatment	tanlingyue@sjtu.edu.cn
WE1P3-3	Lishu Wu	Heterogenous Integration of InP DHBT and Si CMOS by 30um Pitch Au-In Microbumps	wulishu117@163.com
WE1P3-4	Ziyu Liu	Simulation of fast room-temperature bonding by mechanical interlock structure applied for 3D integration	liuziyu@fudan.edu.cn
WE1P3-5	Bang Ouyang	Low Temperature Packaging for Ion-Sensitive Organic Field Effect Transistor	869176853@sjtu.edu.cn
Session 4 (WE1P4)
WE1P4-1	Cheol Seong Hwang	Ferroelectric field-effect transistors for the next-generation storage	cheolsh@snu.ac.kr
WE1P4-2	Tuo-Hung Hou	Toward Energy-efficient, Cost-effective, and Variation-aware In-memory Computing for Deep Learning Acceleration	thhou@mail.nctu.edu.tw
WE1P4-3	Yu Cao	Design Limits of In-Memory Computing: Beyond the Crossbar	yu.cao@asu.edu
WE1P4-4	Shuxian Lv	Three-Orders Improvement of Endurance in Hafina Based MFS Capacitor Through CF4 Plasma Pre-Treatment	lvshuxian@ime.ac.cn
WE1P4-5	Yaotian Ling	A RRAM Based Max-Pooling Scheme for Convolutional Neural Network	ytling@pku.edu.cn
Session 5 (WE2P1)
WE2P1-1	David Horsley	Piezoelectric Micromachined Ultrasonic Transducers for Range-Finding Applications	dahorsley@ucdavis.edu
WE2P1-2	SungWoo Nam	Biaxially-Stretchable Kirigami-Patterned Mesh Structures for Motion Artifact-Free Wearable Devices	hyochan@illinois.edu
WE2P1-3	M. Bulut Coskun	Thermal Infrared Detector Sparse Array for NASA Planetary Applications	bulut.coskun@jpl.nasa.gov
WE2P1-4	Nianying Wang	Double-Deck Metal Solenoids 3D Integrated in Silicon Wafer for Kinetic Energy Harvester	wangny@shanghaitech.edu.cn
WE2P1-5	Lei Wang	A Novel Piston-Like Piezoelectric Micromachined Ultrasonic Transducer Based on Mass Loading Effect	lei_wang@whu.edu.cn
Session 6 (WE2P2）
WE2P2-1	Deji Akinwande	Analog Switches Based on Boron Nitride Memristors for Application in 5G and Terahertz	myungsoo.kim@utexas.edu
WE2P2-2	Volker Sorger	Photonic Machine Intelligence: Photonic Tensor Core and Nonvolatile Memories	sorger@gwu.edu
WE2P2-3	Paul K. L. Yu	Efficient Silicon Photonic Waveguide Switches for Chip-Scale Beam Steering Applications	l1chiang@eng.ucsd.edu
WE2P2-4	Qianpeng Zhang	A Design of Horizontal Perovskite Nanowire LED for Better Light Extraction	qzhangaf@connect.ust.hk
WE2P2-5	Anton Hlushchenko	Loss Compensation Symmetry for TE Modes of Asymmetrical Optical Coupler with Gain and Loss	glushchenko.ant@gmail.com
Session 7 (WE2P3)
WE2P3-1	Kosuke Nagashio	All 2D Heterostructure Tunnel Field Effect Transistors	nagashio@material.t.u-tokyo.ac.jp
WE2P3-2	Iuliana Radu	ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices	Iuliana.Radu@imec.be
WE2P3-3	Lain-Jong Li	Epitaxial Growth of Single-Crystal Two-Dimensional Materials for Electronic Applications	lanceli1@hku.hk
WE2P3-4	Hao Qiu	A Compact Model for Transition Metal Dichalcogenide Field Effect Transistors with Effects of Interface Traps	yshi@nju.edu.cn
WE2P3-5	Zhihao Yu	Reliability of Ultrathin High-k Dielectrics on 2D Semiconductors	zhihao@njupt.edu.cn
Session 8 (WE2P4)
WE2P4-1	Thomas Mikolajick	The Case for Ferroelectrics in Future Memory Devices	thomas.mikolajick@namlab.com
WE2P4-2	Plamen Asenov	A Multiscale Statistical Evaluation of DRAM Variable Retention Time	plamen.asenov@synopsys.com
WE2P4-3	Tecla Ghilardi	3D-NAND Cell Challenges to Enable High Density and High-Performance Devices	tghilard@micron.com
WE2P4-4	Xingsong Su	Performance Boost of p-MOSFET with Al-Incorporated HfSiOx in DRAM Periphery Transistor Application	xingsong.su@cxmt.com
WE2P4-5	Yuta Aiba	Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling with 6-Bit per Cell (HLC) and Beyond	yuta1.aiba@kioxia.com
Session 9 (TH1A1)
TH1A1-1	Walter Schwarzenbach	Smart Cut SiC Substrates for Manufacturing of High Quality Power Devices	Walter.schwarzenbach@soitec.com
TH1A1-2	Shisheng Xiong	Directed Self-Assembly of Block Copolymers for Microelectronic Manufacturing	sxiong@fudan.edu.cn
TH1A1-3	Xuanming Duan	Nanolithography to Beat the Diffraction Limit Using Ultrafast Laser	xmduan@jnu.edu.cn
Session 10 (TH1A2)
TH1A2-1	Zhenqiang Ma	Flexible Semiconductor Device Technologies	mazq@engr.wisc.edu
TH1A2-2	Muhammad M. Hussain	Personalized Medicinal Platform	muhammad.hussain@kaust.edu.sa
TH1A2-3	Wenhui Fu	Low-Voltage Synaptic Transistor Based on Polyvinylpyrrolidone Composite Electrolyte for Humidity Sensing	fuwenhui@shu.edu.cn
Session 11 (TH1A3)
TH1A3-1	Laura Bégon-Lours	A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory	lbe@zurich.ibm.com
TH1A3-2	Tianyi Liu	A Novel Leaky-FeFET Based True Random Number Generator with Ultralow Hardware Cost for Neuromorphic Application	1600012930@pku.edu.cn
TH1A3-3	Caidie Cheng	Hf1-xZrxO2 Based Bipolar Selector with High Uniformity and High Selectivity for Large-Scale Integration of Memristor Crossbars	ccd6907@163.com
Session 12 (TH1A4)
TH1A4-1	Daoxin Dai	Silicon Nanophotonic Devices for On-chip Optical Modulation and Switching	dxdai@zju.edu.cn
TH1A4-2	Xiulai Xu	Purcell effect and lasing from quantum dots in a topological photonic crystal nanocavity	xixu@iphy.ac.cn
TH1A4-3	Fred Kish	Manufacturing of State-of-The-Art InP-Based Photonic Integrated Circuits	fakish@ncsu.edu
Session 13 (TH2P1)
TH2P1-1	Yu Sun	Manipulation and Characterization of Human Cardiomyocytes for Drug Screening	sun@mie.utoronto.ca
TH2P1-2	Jian-Song Sheng	The manufacture and characterization of a novel ultrasonic transducer for medical imaging	1585077286@qq.com
TH2P1-3	Tianhong Cui	Shrink Polymer Micro Sensors for Detection of Water Pollutants	cuixx006@me.umn.edu
TH2P1-4	Ge Deng	A Flexible Electroencephalography Electronic Skin Based on Graphene	dg18@mails.tsinghua.edu.cn
TH2P1-5	Shuguang Yang	Surface Modification to Improve the Electrochemical Performance of Neural Microelectrode Arrays	ysg@mail.ustc.edu.cn
Session 14 (TH2P2)
TH2P2-1	Zhiyong Fan	Bionic Eye with Perovskite Nanowire Array Retina	eezfan@ust.hk
TH2P2-2	Shunjie Yu	Beta-Ga2O3 Micro-Flake FET SBPD with Record Detectivity of 3.87E17 Jones for Weak Light Detection	shunjie@mail.ustc.edu.cn
TH2P2-3	Xiao Hou	Large Area and Flexible Organic Active Matrix Image Sensor Array Fabricated by Solution Coating Processes at Low Temperature	xiao.hou@sjtu.edu.cn
TH2P2-4	Ning-Qin Deng	A Sensitive Vertical Standing Graphene/Silicon Schottky Photodetector to Angle Changes	dengningqin@tsinghua.edu.cn
TH2P2-5	Zheng Lou	Ultra-High-Sensitivity Photodetector from Ultraviolet to Visible Based on Ga-Doped In2O3 Nanowire Phototransistor with Top-Gate Structure	zlou@semi.ac.cn
Session 15 (TH2P3)
TH2P3-1	Aaron D Franklin	From the Top or Through the Edge: What is the Most Scalable Contact to 2D Semiconductors?	aaron.franklin@duke.edu
TH2P3-2	Hoe Tan	Semiconductor Nanostructures for Optoelectronic and Energy Applications	Hoe.Tan@anu.edu.au
TH2P3-3	Yun Sun	Small-Hysteresis Flexible Carbon Nanotube Thin-Film Transistors Using Stacked Architecture	yunsun@imr.ac.cn
TH2P3-4	Xiaohan Wu	Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect	xiaohan_wu@utexas.edu
TH2P3-5	Cheng Li	A Study of Materials Impacts on Graphene Electrostatic Discharge Switches	cli043@ucr.edu
Session 16 (TH2P4)
TH2P4-1	Chris Bailey	Modeling for assessing Semiconductor Packages in High-Reliability Applications	C.Bailey@greenwich.ac.uk
TH2P4-2	Tanja Braun	Fan-Out Wafer and Panel Level Packaging - A Platform for 3D Integration	tanja.braun@izm.fraunhofer.de
TH2P4-3	Shuhui Chen	Growth Behavior and Mechanism of Tin Whisker on Isolated SnAg Solder Under Compressive Stress	1102csh@sjtu.edu.cn
TH2P4-4	Yingxia Liu	Undercooling and Microstructure Analysis for the Design of Low Melting Point Solder	lyxliuyingxia@gmail.com
TH2P4-5	Rong Sun	An Epoxy Composite Film for Modified Semi-Addictive Process	rong.sun@siat.ac.cn
Session 17 (TH3P1)
TH3P1-1	Myung-Hee Na	Disruptive Technology Elements, and Rapid and Accurate Block-Level Performance Evaluation for 3nm and Beyond	myung.hee.na@imec.be
TH3P1-2	Shinichi Takagi	Advanced CMOS Technologies for Ultra-Low Power Logic and AI Applications	takagi@ee.t.u-tokyo.ac.jp
TH3P1-3	Shohei Sekiguchi	Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at Cryogenic Temperature	shohei@nano.iis.u-tokyo.ac.jp
TH3P1-4	Fei Wang	Sub-3nm Transition-Metal Dichalcogenides FETs: Theoretical Insights into the Impacts of Layer Numbers and Channel Lengths	sduwangfei@163.com
TH3P1-5	Jingyi Ma	Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering	19212020049@fudan.edu.cn
Session 18 (TH3P2)
TH3P2-1	Bruce Green	150 mm RF GaN Technology for Commercial RF Applications	bruce.green@nxp.com
TH3P2-2	Jiabo Chen	Nearly Ideal Quasi-Vertical GaN Schottky Barrier Diode with 1010 High On/Off Ratio and Ultralow Turn on Voltage via Post Anode Annealing	jbchen@stu.xidian.edu.cn
TH3P2-3	Xing Wei	A Novel Normally-Off Laterally Coupled p-GaN Gate HEMT	xwei2018@sinano.ac.cn
TH3P2-4	Shaoyu Sun	Reverse Conduction Induced Dynamic Ron Effect in GaN HEMT with p-GaN Gate	1005820199@qq.com
TH3P2-5	Jia Wang	3D GaN Power Switching Electronics: A Revival of Interest in ELO	wangjia@ucla.edu
Session 19 (TH3P3)
TH3P3-1	Gihun Choe	Variability Analysis for Ferroelectric Field-Effect Transistors	gchoe6@gatech.edu
TH3P3-2	Yuanyuan Zhang	Revisiting the Definition of Ferroelectric Negative Capacitance Based on Gibbs Free Energy	zhangyy@ime.ac.cn
TH3P3-3	David Esseni	Ferroelectric Based FETs and Synaptic Devices for Highly Energy Efficient Computational Technologies	esseni@uniud.it
TH3P3-4	Om Prakash	On the Critical Role of Ferroelectric Thickness for Negative Capacitance Transistor Optimization	omprakashnitk@gmail.com
TH3P3-5	Riccardo Fontanini	Modelling and Design of FTJs as High Reading-Impedance Synaptic Devices	fontanini.riccardo@spes.uniud.it
Session 20 (TH3P4)
TH3P4-1	Shenzhi Yang	On-Chip Test Acceleration for Advanced Technologies	sean.yang@semitronix.com
TH3P4-2	Zuochang Ye	Efficient Yield Analysis and Optimization with Transient Sensitivity Analysis	zuochang@tsinghua.edu.cn
TH3P4-3	Wenlan Jiang	Statistical Feature Extraction and Hybrid Feature Selection for Material Removal Rate Prediction in Chemical Mechanical Planarization Process	jwl18@mails.tsinghua.edu.cn
TH3P4-4	Sanjiv Mittal	Maximizing Output from an Equipment Fleet in a Semiconductor Fab	Sanjiv_Mittal@amat.com
TH3P4-5	Steven George	Thermal Atomic Layer Etching of Microelectronic Materials	Steven.George@Colorado.edu
Session 21 (FR1A1)
FR1A1-1	Masaharu Kobayashi	Physics and Applications of Emerging Ferroelectric Devices	masa-kobayashi@nano.iis.u-tokyo.ac.jp
FR1A1-2	Peide Ye	Dynamics Studies of Polarization Switching in Ferroelectric Hafnium Zirconium Oxide	yep@purdue.edu
FR1A1-3	Kaizhen Han	Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness	e0204975@u.nus.edu
FR1A1-4	Shuai Zhang	Tunable Random Number Generators Implemented by Spin-Orbit Torque Driven Stochastic Switching of a Nanomagnet for Probabilistic Spin Logic	zs2016@hust.edu.cn
FR1A1-5	Hanlin Xie	100 nm T-Gate GaN-On-Si HEMTs Fabricated with CMOS-Compatible Metallization for Microwave and Mm-Wave Applications	hanlin@smart.mit.edu
Session 22 (FR1A2)
FR1A2-1	Huili Grace Xing	Ga2O3 Power Devices and How They Stand up to GaN and SiC?	grace.xing@cornell.edu
FR1A2-2	Yibo Wang	Channel Mobility Properties of Ga2O3 MOSFETs on Si Substrate Fabricated by Ion Cutting Process	wangyibo2576@gmail.com
FR1A2-3	Sang-Woo Han	GaN Super-Heterojunction Schottky Barrier Diode with over 10 kV Blocking Voltage	sxh1218@psu.edu
FR1A2-4	Yuquan Su	High Density Packaging Trends Driven by Miniaturization of Home Appliance	yuquan.su@midea.com
FR1A2-5	Masataka Higashiwaki	Development of High-Frequency Ga2O3 Field-Effect Transistors	mhigashi@nict.go.jp
Session 23 (FR1A3)
FR1A3-1	Thierry Poiroux	L-UTSOI: Best In-Class Compact Modeling Solution for FD-SOI Technologies	thierry.poiroux@cea.fr
FR1A3-2	Guofu Niu	RF Linearity of SiGe HBT: Physics, Compact Modeling Using Mextram 505 and X-Parameter Based Measurements	niuguof@auburn.edu
FR1A3-3	QingPeng Wang	Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device Performance	qingpeng.wang@lamresearch.com
FR1A3-4	Weizhuo Gan	Multi-Physics Evaluation of Silicon Steep-Slope Cold Source FET	ganweizhuo@ime.ac.cn
FR1A3-5	Yu Zhu	Enhanced On-State Current in Barrier-Free Carbon Heterojunction Tunneling Field-Effect Transistor	zhuyu@hust.edu.cn
Session 24 (FR1A4)
FR1A4-1	Yuan Lin	Tailoring the electromechanical coupling in stretchable inorganic thin-film electronics (Invited talk)	linyuan@uestc.edu.cn
FR1A4-2	Yulong Dong	Dynamics of Negative Capacitance Induced by Ferroelectric Switching in Ferroelectric-Resistor Circuit
FR1A4-3	Guoqing Zhang	Synaptic Plasticity in Novel Non-Volatile FET with Amorphous Gate Insulator Enabled by Oxygen Vacancy Related Dipoles	18861192679@163.com
FR1A4-4	Yuhui He	Selecting and Optimizing Threshold Switching Materials and Devices for Stochastic Neuron	heyuhui@hust.edu.cn
FR1A4-5	Qi Li	High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature	1901111209@pku.edu.cn
Session 25 (FR2A1)
FR2A1-1	Cor Claeys	Low Frequency Noise: A Show Stopper for State-Of-The-Art and Future Si, Ge-Based and III-V Technologies	c.claeys@ieee.org
FR2A1-2	Adelmo Ortiz-Conde	A Review of Recent MOSFET Source and Drain Resistances Extraction Methods Using a Single Test Device	ortizc@ieee.org
FR2A1-3	Kenji Ohmori	White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling	ohmori@devicelab.co.jp
FR2A1-4	Zhen Zhou	MOSFET C-V Characteristics Extraction Based on Ring Oscillator with Addressable DUTs	xjz058zhouzhen@163.com
FR2A1-5	Xiaoqiao Yang	Performance Trade-Offs in Complementary FET (CFET) Device Architectures for 3nm-Node and Beyond	jordyyang@yeah.net
Session 26 (FR2A2)
FR2A2-1	Atsushi Ogura	Phonon Properties of Group IV Materials for Thermoelectric Applications	a_ogura@meiji.ac.jp
FR2A2-2	Tsunenobu Kimoto	Progress and Future Challenges of SiC Power MOSFETs	kimoto.tsunenobu.4n@kyoto-u.ac.jp
FR2A2-3	Jie Wei	Novel Ultralow On-Resistance Accumulation-Mode LDMOS with Integrated Diodes	weijieuestc@uestc.edu.cn
FR2A2-4	Rui Jin	Process Improvement for Stabilizing the VLD Effective Dose of 4500V Trench-Gated IGBT Platform	jinrui@geiri.sgcc.com.cn
FR2A2-5	Masahiro Watanabe	Accurate TCAD Simulation of Trench-Gate IGBTs and Its Application to Prediction of Carrier Lifetime Requirements for Future Scaled Devices	watanabe@ee.e.titech.ac.jp
Session 27 (FR2A3)
FR2A3-1	Minghong Xu	A Compact Model of Analog RRAM Considering Temperature Coefficient for Neural Network Evaluation	xumh19@mails.tsinghua.edu.cn
FR2A3-2	Hidehiro Asai	Development of Integrated Device Simulator for Quantum Bit Design: Self-Consistent Calculation for Quantum Transport and Qubit Operation	hd-asai@aist.go.jp
FR2A3-3	Zewei Wang	Designing EDA-Compatible Cryogenic CMOS Platform for Quantum Computing Applications	wangzw1@shanghaitech.edu.cn
FR2A3-4	Benjamín Iñiguez	Compact Modeling of Organic and IGZO TFTs from 150K to 350K	benjamin.iniguez@urv.cat
FR2A3-5	Slobodan Mijalkovic	Compact Physics-Based Charge Core Model for CAAC In-Ga-Zn Oxide Multi-Gate FETs	Slobodan.Mijalkovic@silvaco.com
Session 28 (FR2A4)
FR2A4-1	Purushothaman Srinivasan	RF Silicon Technologies and Its Reliability for Sub-6GHz and mmWave 5G Applications	purushothaman.srinivasan@ globalfoundries.com
FR2A4-2	Yuichiro Mitani	Re-Consideration of Influence of Fluorine on SiO2 and SixNy Reliabilities	mitaniy@tcu.ac.jp
FR2A4-3	Feilong Zhang	ESD Co-Design of Mm-Wave RF Switch in 22nm SOI	fzhan008@ucr.edu
FR2A4-4	Shuntaro Fujii	Experimental Understanding of the Impact of Channel Percolation on Low Frequency Noise Using Transient Enhanced Diffusion of Channel Dopants	fujii.sv@om.asahi-kasei.co.jp
FR2A4-5	Owen Liu	Design for Reliability based on Customer Obsession	owenliu@amazon.com
Session 29 (FR3P1)
FR3P1-1	Anabela Veloso	Nanosheet FETs and Their Potential for Enabling Continued Moore's Law Scaling	veloso@imec.be
FR3P1-2	Masaya Kawano	Technology Trends in 2.5D/3D Packaging and Heterogeneous Integration	kawanom@ime.a-star.edu.sg
FR3P1-3	Hai-Jin	Optimization of Contact W Related Processes for 28/22 nm HKMG Technology Node	luhaijin@hlmc.cn
FR3P1-4	Yu Zhao	Formation Mechanism of a Rounded SiGe-Etch-Front in an Isotropic Dry SiGe Etch Process for Gate-All-Around (GAA)-FETs	yu.zhao.nj@hitachi.com
FR3P1-5	Dongxue Zhao	Optimization of Bump Defect at High-Concentration In-Situ Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application	zhaodongxue@ime.ac.cn
Session 30 (FR3P2)
FR3P2-1	Ting Zhang	Flexible and Wearable Sensing Electronics	tzhang2009@sinano.ac.cn
FR3P2-2	Tse Nga Ng	Emerging Designs for Polymer-Based Optoelectronics and Energy Storage	tnn046@ucsd.edu
FR3P2-3	Chaochao Shen	Highly Stable Fibrous Solid-State Ag/AgCl Reference Electrode	chaochao_shen@sjtu.edu.cn
FR3P2-5	Bin Tian	Printed Stretchable Multifunctional E-Textile for Wearable Electronics	bin.tian@whu.edu.cn
Session 31 (FR3P3)
FR3P3-1	Qiangfei Xia	Implementation, Operation and Applications of Memristive Neural Networks	qxia@umass.edu
FR3P3-2	Catherine Graves	In-memory computing with memristor content addressable memory circuits	catherine.graves@hpe.com
FR3P3-3	Xi-Zhu Peng	A Neural Network-Based Harmonic Suppression Algorithm for Medium-To-High Resolution ADCs	xzpeng@uestc.edu.cn
FR3P3-4	Qiumeng Wei	Artificial Neuron with Spike Frequency Adaptation Based on Mott Memristor	wqm20@mails.tsinghua.edu.cn
FR3P3-5	Chang Liu	Associative Learning Circuit Based on Synaptic Transistors with Temporal Dynamics	liuchang1@pku.edu.cn
Session 32 (FR3P4）
FR3P4-1	Ryohei Orihara	Applications of AI Technologies in Flash Memory Business	orihara@acm.org
FR3P4-2	Chen He	Applications for Machine Learning in Semiconductor Manufacturing and Test	chen.he@nxp.com
FR3P4-3	Tsuyoshi Moriya	Machine Learning Approaches Optimizing Semiconductor Manufacturing Processes	tsuyoshi.moriya@tel.com
FR3P4-4	Jeffrey David	Applications for Machine Learning in Semiconductor Manufacturing	jeff.david@pdf.com
FR3P4-5	Shibing Wang	Improving accuracy and cycle-time in computational lithography with Machine Learning	shibing.wang@asml.com
Session 33 (FR4P1)
FR4P1-1	Ryota Narishige/Masaharu Shiratani	Sputtering Growth of Metal Oxynitride Semiconductors for Excitonic Devices	r.narishige@plasma.ed.kyushu-u.ac.jp
FR4P1-2	Quanxi Jia	Growth of Ferroic Metal Oxide Films with Desired Properties by Polymer-Assisted Deposition	qxjia@buffalo.edu
FR4P1-3	Huan Zhu	Effect of Low Temperature Annealing on Pn Junction Formation Using Si Paste	zhu.huan.752@s.kyushu-u.ac.jp
FR4P1-4	Jinqing He	Optimization of Tilted Profile in Ultra-High Aspect Ratio Etch Process for 3D NAND Flash Memory	hejinqing18@mails.ucas.ac.cn
FR4P1-5	Shogo Shigemasu	Forming Low-Resistivity Tungsten Contacts and Avoiding Fluorine Diffusion by Flash Lamp Annealing (FLA)	shigemasu@screen.co.jp
Session 34 (FR4P2)
FR4P2-1	Wentao Xu	Artificial synapses and sensorimotor nerves	wentao@nankai.edu.cn
FR4P2-3	Matti Mäntysalo	Printed conformable electronics for body-worn sensors and systems	matti.mantysalo@tuni.fi
FR4P2-4	Tung-Huei Ke	FMM Free Organic and Hybrid Electronics Manufacturing Enabled by Photolithography	tunghuei@imec.be
FR4P2-5	Sujie Chen	Semi-Disposable Self-Adhesive Sensor System for Wearable Electrocardiogram Detection	chensj2004@163.com
Session 35 (FR4P3)
FR4P3-1	Mario Lanza	Wafer-scale integration of 2D materials in high-density memristive crossbar arrays for artificial neural networks	mlanza@suda.edu.cn
FR4P3-3	Jian-Jun Zhang	Ge/Si Quantum Wires for Quantum Computing	jjzhang@iphy.ac.cn
FR4P3-4	Zuheng Wu	Convertible Volatile and Non-Volatile Resistive Switching in a Self-Rectifying Pt/TiOx/Ti Memristor	wuzuheng@ime.ac.cn
FR4P3-5	Xumeng Zhang	Convertible Volatile and Non-Volatile Resistive Switching in a Self-Rectifying Pt/TiOx/Ti Memristor	xumengzhang@fudan.edu.cn
Session 36 (FR4P4)
FR4P4-1	Xiaoxin Xu	ntegration of Resistive Switching Memory on Advanced Technology Nodes	xuxiaoxin@ime.ac.cn
FR4P4-2	Xue Feng	Manufacture and Characterization of Ultrathin Flexible Chips	fengxue@tsinghua.edu.cn
FR4P4-3	Gilson Wirth	Unified Compact Modeling of Charge Trapping in 1/f Noise, RTN and BTI	gilson.wirth@ufrgs.br
FR4P4-4	Christophe Maleville	Engineered substrate as a fast track to technology performance	Christophe.MALEVILLE@soitec.com
FR4P4-5	Zhengrui Zhu	Thermoelectric and Photoelectric Effects of 2D Bismuth for Flexible Electronics	zr-zhu@seu.edu.cn

Short Courses & Tutorials

Paper ID	Presenting Author	Title	Email
Tutorial 1
TTUA1-1	Zhenan Bao	Skin-Inspired Organic Electronics	zbao@stanford.edu
TTUA1-2	Jong-Hyun Ahn	2D material based flexible and wearable electronics	AHNJ@YONSEI.AC.KR
TTUA1-3	Man Wong	A Metal-Oxide Transistor Technology for Flexible Electronics	eemwong@ust.hk
Tutorial 2
TTUA2-1	Mohamed-Slim Alouini	6G: Towards a More Connected and Sustainable World	slim.alouini@kaust.edu.sa
TTUA2-2	Kang L. Wang	Topological Spintronics for Low Energy Dissipation	wang@ee.ucla.edu
TTUA2-3	Philip Wong	In- and Near-Memory Computing Using 2D/3D Resistive Memories	hspwong@stanford.edu
Short Course 1
STUP1-1	Shaodi Wang	Computing-in-memory design for general neural networks inference	shaodi.wang@witintech.com
STUP1-2	Damien Querlioz	Emerging Device Technologies for Neuromorphic Computing and Machine Learning	damien.querlioz@c2n.upsaclay.fr
STUP1-3	Qi Xiang	RRAM Based Computing-In-Memory	qxiang1@yahoo.com
Short Course 2
STUP2-1	Edoardo Charbon	Cryo-CMOS for Quantum Computing	edoardo.charbon@epfl.ch
STUP2-2	Lvzhou Li	Understanding quantum computing by quantum algorithms	lilvzh@mail.sysu.edu.cn
STUP2-3	Yuxi Liu	Quantum computing using superconducting quantum coherence devices	yuxiliu@mail.tsinghua.edu.cn
Short Course 3
STUP3-1	Tatsuro Maeda	Layer transfer technology of post-Si materials for monolithic 3D integration	t-maeda@aist.go.jp
STUP3-2	Digh Hisamoto	Device/Process Technology Challenges for CMOS System Evolution
STUP3-3	Wei-Min Gao	EUV lithography and its applications to logic and memory devices	wei-min.gao@asml.com
Short Course 4
STUP4-1	Kevin J. Chen	Integration with GaN-on-Si Power HEMT platform	eekjchen@ust.hk
STUP4-2	Srabanti Chowdhury	Energy efficient power switches with Gallium Nitride technology	srabanti@stanford.edu
STUP4-3	Yoshiyuki Yonezawa	Element Technology for Next Generation High- to Ultra-High Voltage SiC Power Device	yoshiyuki-yonezawa@aist.go.jp

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