VIRTUAL PARTICIPATION

Virtual Conference Center

Virtual Meeting Instructions

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Guidelines for Virtual Participation

Day 1 April 8th

• 09:00—12:30 Tutorial 1 TTUA1: Flexible electronics + Display

  • TTUA1-1 9:00 Skin-Inspired Organic Electronics
    Zhenan Bao, Stanford University, California, USA
  • TTUA1-2 10:10 2D material based flexible and wearable electronics
    Jong-Hyun Ahn, Yonsei University, Seoul, Korea
  • TTUA1-3 11:20 A Metal-Oxide Transistor Technology for Flexible Electronics
    Man Wong, Hong Kong University of Science and Technology, Hong Kong, China

• 09:00—12:30 Tutorial 2 TTUA2: Future Communication and Computing

  • TTUA2-1 9:00 6G: Towards a More Connected and Sustainable World
    Mohamed-Slim Alouini, King Abdullah University of Science and Technology, Saudi Arabia
  • TTUA2-2 10:10 Topological Spintronics for Low Energy Dissipation
    Kang L. Wang, University of California, Los Angeles, USA
  • TTUA2-3 11:20 In- and Near-Memory Computing Using 2D/3D Resistive Memories
    Philip Wong, Stanford University, California, USA

• 09:00—12:30 HIR Workshop WTUA4

  • 09:00—09:05 Welcome EDTM & HIR
  • 09:05—09:30 HIR Overview: William Chen, WR Bottoms & Ravi Mahajun
  • 09:30—09:55 Automotive Electronics: Urmi Ray & Rich Rice
  • 09:55—10:20 SiP & Module: R. Aschenbrenner, Klaus Pressel, Erik Jung
  • 10:20—10:45 MEMS & Sensor Integration: Shafi Saiyed & MaryAnn Mahar
  • 10:45—11:10 Simulation & Co-Design: Christopher Bailey & Xuejun Fan
  • 11:10—11:35 Reliability: Abhijit Dasgupta, Richard Rao, Shubhana Sahasrabudha
  • 11:35—12:00 Integrated Power Electronics: Patrick McCluskey & Douglas Hopkins
  • 12:00—12:30 Panel Session: Moderators: Subramanian Iyer & William Chen

• 13:50—17:20 Short Course 1 STUP1: Advanced Memories and Emerging Applications

  • STUP1-1 14:00 Computing-in-memory design for general neural networks inference
    Shaodi Wang, Founder/CEO of WITINMEM, Beijing, China
  • STUP1-2 15:10 Emerging Device Technologies for Neuromorphic Computing and Machine Learning
    Damien Querlioz, Université Paris-Saclay, CNRS, France
  • STUP1-3 16:20 RRAM Based Computing-In-Memory
    Qi Xiang, CTO of Xiamen Industrial Technology Research Institute Co., LTD, China

• 13:50—17:20 Short Course 2 STUP2: Quantum Computing Technologies

  • STUP2-1 14:00 Cryo-CMOS for Quantum Computing
    Edoardo Charbon, EPFL, Switzerland
  • STUP2-2 15:10 Understanding quantum computing by quantum algorithms
    Lvzhou Li, Sun Yat-sen University, China
  • STUP2-3 16:20 Quantum computing using superconducting quantum coherence devices
    Yuxi Liu, Tsinghua University, China

• 13:50—17:20 Short Course 3 STUP3: Advanced Processing and Manufacturing

  • STUP3-1 14:00 Layer transfer technology of post-Si materials for monolithic 3D integration
    Tatsuro Maeda, National Institute of Advanced Industrial Science and Technology, Japan
  • STUP3-2 15:10 Device/Process Technology Challenges for CMOS System Evolution
    Digh Hisamoto, Hitachi, Japan
  • STUP3-3 16:20 EUV lithography and its applications to logic and memory devices
    Wei-Min Gao, ASML China

• 13:50—17:20 Short Course 4 STUP4: Ultra/Wide Bandgap Power Electronics

  • STUP4-1 14:00 Integration with GaN-on-Si Power HEMT platform
    Kevin J. Chen, Hong Kong University of Science and Technology, Hong Kong, China
  • STUP4-2 15:10 Energy efficient power switches with Gallium Nitride technology
    Srabanti Chowdhury, Stanford University, California, USA
  • STUP4-3 16:20 Element Technology for Next Generation High- to Ultra-High Voltage SiC Power Device
    Yoshiyuki Yonezawa, AIST, Japan

Day 2 April 9th

• 09:00—09:30 Opening Ceremony

• 09:30—10:15 Plenary 1: Creating Values through Innovations on Mature Nodes of Technologies of Integrated Circuits
  Haijun Zhao, Co-CEO, SMIC., PR China

• 10:15—11:00 Plenary 2: How to build a camera with highest resolution: a photonics perspective
  Professor Xiang Zhang, President and Vice-Chancellor
  The University of Hong Kong, Hong Kong SAR, PR China

• 11:00—11:45 Plenary 3: The power of image sensors for innovation
  Teruo Hirayama, Executive Chief Engineer, Sony Corp., Japan

• 13:30—15:10 Session 1 WE1P1: Materials Growth and Applications

  • WE1P1-1 13:30 Pushing the Limit of Lithography for Patterning Two-Dimensional Lattices in III-V Semiconductor Quantum Wells (Invited talk)
    N.A. Franchina Vergel¹, C. Post², F. Vaurette¹, Y. Lambert¹, D. Yarekha¹, C. Coinon¹, G. Fleury³, T.S. Kulmala⁴, T. Xu⁵, L. Desplanque¹, X. Wallart¹, D. Vanmaekelbergh², C. Delerue¹, B. Grandidier¹；¹Univ. Lille, France,²Utrecht University, The Netherlands, ³Univ. Bordeaux, France,⁴Heidelberg Instruments, Switzerland,⁵Shanghai University, China
  • WE1P1-2 13:50 Graphene Synthesis: From Single Crystalline Wafer to Edge Specific Nano-Ribbon (Invited talk)
    Zengfeng Di, Tianru Wu, Haomin, Wang, Qingkai Yu, Xiaoming Xie; Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China
  • WE1P1-3 14:10 Artificial Heterostructures Enabled by Remote Epitaxy (Invited talk)
    Jeehwan Kim; Massachusetts Institute of Technology, USA
  • WE1P1-4 14:30
    Yan Liu, Yue Peng, Genquan Han; Xidian University, China
  • WE1P1-5 14:50 Silicon Nanocrystals: Fabrication, Physical Properties and Applications (Invited talk)
    Ilya Sychugov; KTH Royal Institute of Technology, Sweden

• 13:30—15:10 Session 2 WE1P2: Hot carrier relaibility and Neuromorphic reliability

  • WE1P2-1 13:30 Hot Carrier Degradation in Classical and Emerging Logic and Power Electronic Devices: Rethinking Reliability for Next-Generation Electronics (Invited talk)
    Muhammad Ashraful Alam, Bikram Kishore Mahajan, Yen-Pu Chen; Purdue University, USA
  • WE1P2-2 13:50 Hot-Carrier-Induced Reliability Concerns for Lateral DMOS Transistors with Split-STI Structures
    Li Lu¹, Ran Ye¹, Siyang Liu¹, Zhibo Yin¹, Yuanchang Sang¹, Weifeng Sun¹, Wei Su², Feng Lin², Shulang Ma², Yuwei Liu²; ¹Southeast University,China, ²CSMC Technologies Corporation, China
  • WE1P2-3 14:10 Identifying Relaxation and Random Telegraph Noises in Filamentary Analog RRAM for Neuromorphic Computing
    Qi Hu¹, Bin Gao¹, Jianshi Tang¹, Zhenqi Hao¹, Peng Yao¹, Yudeng Lin¹, Yue Xi¹, Meiran Zhao¹, Jiezhi Chen², He Qian¹,Huaqiang Wu¹; ¹Tsinghua University, China, ²Shandong University, China
  • WE1P2-4 14:30 Nonlinear Weight Quantification for Mitigating Read Disturb Effect on Multilevel RRAM-Based Neural Network
    Lindong Wu, Zongwei Wang , Zhizhen Yu, Yabo Qin, Qingyu Chen, Yimao Cai , Ru Huang; Peking University, China
  • WE1P2-5 14:50 Predicted static fatigue lifetime of silica optical interconnects: application of Boltzmann-Arrhenius-Zhurkov (BAZ) model (Invited talk)
    Ephraim Suhir; Portland State University, USA

• 13:30—15:10 Session 3 WE1P3: Heterogeneous Integration

  • WE1P3-1 13:30 Heterogeneous Integration for Silicon Photonic Systems: Challenges and Approaches (Invited talk)
    John M. Dallesasse, John A. Carlson, Manaav Ganjoo, Leah Espenhahn; University of Illinois at Urbana-Champaign, USA
  • WE1P3-2 13:50 Effect of Leveler on Electrical Resistance and Microstructural of Electroplated Copper After Heat Treatment
    Lingyue Tan, Silin Han, Shuhui Chen, Chu Liang, Yunwen Wu, Huiqin Ling, Ming Li, Tao Hang; Shanghai Jiao Tong University, China
  • WE1P3-3 14:10 Heterogenous Integration of InP DHBT and Si CMOS by 30μm Pitch Au-In Microbumps
    LiShu Wu^1,2, JiaYun Dai¹, Cheng Wei¹, YueChan Kong¹, TangShen Chen¹, Tong Zhang²; ¹Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute, China, ²Southeast University, China
  • WE1P3-4 14:30 Simulation of fast room-temperature bonding by mechanical interlock structure applied for 3D integration
    Ziyu Liu, Yaomin Gong, Lin Chen, Qingqing Sun, David Wei Zhang; Fudan University, China
  • WE1P3-5 14:50 Low Temperature Packaging for Ion-Sensitive Organic Field Effect Transistor
    Yixiao Tang, Wei Tang, Yukun Huang, Yawen Song, Bang Ouyang, Xiaojun Guo; Shanghai Jiao Tong University, China

• 13:30—15:10 Session 4 WE1P4: New memories and in memory computing

  • WE1P4-1 13:30 Ferroelectric field-effect transistors for the next-generation storage (Invited talk)
    Cheol Seong Hwang; Seoul National University,Korea
  • WE1P4-2 13:50 Toward Energy-efficient, Cost-effective, and Variation-aware In-memory Computing for Deep Learning Acceleration (Invited talk)
    Tuo-Hung Hou; National Chiao Tung University, China
  • WE1P4-3 14:10 Design Limits of In-Memory Computing: Beyond the Crossbar (Invited talk)
    Gokul Krishnan¹, Jubin Hazra², Maximilian Liehr², Xiaocong Du¹, Karsten Beckmann², Rajiv V. Joshi³, Nathaniel C. Cady², Yu Cao¹; ¹Arizona State University,USA, ²State University of New York Polytechnic Institute,USA, ³IBM T. J. Watson Research Center Yorktown Heights,USA
  • WE1P4-4 14:30 Three-Orders Improvement of Endurance in Hafina Based MFS Capacitor Through CF4 Plasma Pre-Treatment
    Shuxian Lv^{1, 2}, Yan Wang^{1, 2}, Zhaomeng Gao^{1, 2}, Zhiwei Dang^{1, 2}, Pengfei Jiang^{1, 2}, Peng Yuan^1,2, Qing Luo^{1, 2}, Shengjie Zhao¹, Hangbing Lv^{1, 2}; ¹Institute of Microelectronics of Chinese Academy of Sciences, China; ²University of Chinese Academy of Sciences, China
  • WE1P4-5 14:50 A RRAM Based Max-Pooling Scheme for Convolutional Neural Network
    Yaotian Ling, Zongwei Wang, Yunfan Yang, Zhizhen Yu, Qilin Zheng, Yabo Qin, Yimao Cai, Ru Huang; Peking University, China

• 15:30—17:10 Session 5 WE2P1: MEMS and Sensors

  • WE2P1-1 15:30 Piezoelectric Micromachined Ultrasonic Transducers for Range-Finding Applications (Invited talk)
    David A. Horsley^1,2, Richard J. Przybyla¹, Stefon E. Shelton¹, Fabian T. Goericke¹, Benjamin E. Eovino¹, Michael Alex¹ , John Logan¹; ¹Chirp Microsystems Corporation,USA, ²University of California, Davis, USA
  • WE2P1-2 15:50 Biaxially-Stretchable Kirigami-Patterned Mesh Structures for Motion Artifact-Free Wearable Devices (Invited talk)
    Hyo Chan Lee¹, Ezekiel Y. Hsieh¹,SungWoo Nam^1,2; ¹Department of Mechanical Science and Engineering, University of Illinois at Urbana – Champaign, USA, ²Department of Materials Science and Engineering, University of Illinois at Urbana – Champaign, USA
  • WE2P1-3 16:10 Thermal Infrared Detector Sparse Array for NASA Planetary Applications (Invited talk)
    M. Bulut Coskun¹, Mina Rais-Zadeh^1,2; ¹California Institute of Technology,USA, ²University of Michigan, Ann Arbor, USA
  • WE2P1-4 16:30 Double-Deck Metal Solenoids 3D Integrated in Silicon Wafer for Kinetic Energy Harvester
    Nianying Wang^1,2,3, Ruofeng Han^1,3, Changnan Chen^1,3, Jiebin Gu^1,3, and Xinxin Li^1,2,3; ¹Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China, ²ShanghaiTech University, China, ³University of Chinese Academy of Sciences, China
  • WE2P1-5 16:50 A Novel Piston-Like Piezoelectric Micromachined Ultrasonic Transducer Based on Mass Loading Effect
    Lei Wang，Jie Zhou, Wei Zhu, Zhipeng Wu, Wenjuan Liu, Chengliang Sun; Institute of Technological Sciences, China

• 15:30—17:10 Session 6 WE2P2: Photonic Devices

  • WE2P2-1 15:30 Analog Switches Based on Boron Nitride Memristors for Application in 5G and Terahertz Communication Systems (Invited talk)
    Myungsoo Kim¹, Emiliano Pallecchi², Guillaume Ducournau², Henri Happy², Deji Akinwande¹; ¹University of Texas at Austin, USA, ² University of Lille, France
  • WE2P2-2 15:50 Photonic Machine Intelligence: Photonic Tensor Core and Nonvolatile Memories (Invited talk)
    Volker J. Sorger; George Washington University, USA
  • WE2P2-3 16:10 Efficient Silicon Photonic Waveguide Switches for Chip-Scale Beam Steering Applications (Invited talk)
    Li-Yuan Chiang¹, Chun-Ta Wang², Steve Pappert¹, Paul K. L. Yu¹; ¹University of California San Diego, USA, ²National Sun Yat-Sen University, China
  • WE2P2-4 16:30 A Design of Horizontal Perovskite Nanowire LED for Better Light Extraction
    Qianpeng Zhang^1,2, Yuanjing Lin³, Xiaofei Sun¹, Bryan Cao¹, Haoning Tang,⁴, Zhiyong Fan^1,2; ¹The Hong Kong University of Science and Technology, China, ²HKUST-Shenzhen Research Institute, China, ³Southern University
  • WE2P2-5 16:50 Loss Compensation Symmetry for TE Modes of Asymmetrical Optical Coupler with Gain and Loss
    Anton Hlushchenko^1,2, Vitalii Shcherbinin², Denis Novitsky³, Vladimir Tuz¹; ¹Jilin University, China, ²Institute of Physics and Technology of NASU, Ukraine, ³NASB, Belarus

• 15:30—17:10 Session 7 WE2P3: 2D materials and devices I

  • WE2P3-1 15:30 All 2D Heterostructure Tunnel Field Effect Transistors (Invited talk)
    Kosuke Nagashio; University of Tokyo, Japan
  • WE2P3-2 15:50 ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices (Invited talk)
    Xiangyu Wu, Dennis Lin, Daire Cott, Jean-Francois de Marneffe, Benjamin Groven, Stephanie Sergeant, Yuanyuan Shi, Quentin Smets, Surajit Sutar, Inge Asselberghs, Iuliana Radu; IMEC, Belgium
  • WE2P3-3 16:10 Epitaxial Growth of Single-Crystal Two-Dimensional Materials for Electronic Applications (Invited talk)
    Areej Aljarb^1,2, Vincent Tung¹, Lain-Jong Li^1,3; ¹KAUST Solar Centre, Kingdom of Saudi Arabia, ²King Abdulaziz University, Kingdom of Saudi Arabia, ³ TSMC Taiwan
  • WE2P3-4 16:30 A Compact Model for Transition Metal Dichalcogenide Field Effect Transistors with Effects of Interface Traps
    Yifei Xu, Weisheng Li, Dongxu Fan, Yi Shi, Hao Qiu, Xinran Wang; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
  • WE2P3-5 16:50 Reliability of Ultrathin High-k Dielectrics on 2D Semiconductors
    Zhihao Yu^1,2, Hongkai Ning², Weisheng Li² , Lei Liu² , Wanqing Meng² , Zhongzhong Luo² , Songhua Cai³, Taotao Li², Peng Wang³ , Yi Shi² , Yong Xu¹ , Xinran Wang²; ¹Nanjing University of Posts and Telecommunications, China, ²School of Electronic Science and Engineering, Nanjing University, China, ³College of Engineering and Applied Sciences, Nanjing University, China

• 15:30—17:10 Session 8 WE2P4: Charge based memories

  • WE2P4-1 15:30 The Case for Ferroelectrics in Future Memory Devices (Invited talk)
    Thomas Mikolajick^1,2, Uwe Schroeder¹, Stefan Slesazeck¹;¹NaMLab gGmbH, Germany, ²IHM, Germany
  • WE2P4-2 15:50 A Multiscale Statistical Evaluation of DRAM Variable Retention Time (Invited talk)
    Plamen Asenov¹ , Salvatore M. Amoroso¹ , Jaehyun Lee¹ , Fabiano Corsetti⁴ , Pieter Vancraeyveld⁴ , Søren Smidstrup⁴ ,Xi-Wei Lin³ ,Victor Moroz³; ¹Synopsys, Scotland, ²Synopsys, Denmark, ³Synopsys, USA
  • WE2P4-3 16:10 3D-NAND cell challenges to enable high density and high performance devices (Invited talk)
    Tecla Ghilardi; Micron
  • WE2P4-4 16:30 Performance Boost of p-MOSFET with Al-Incorporated HfSiOx in DRAM Periphery Transistor Application
    Xingsong Su, Kang You, Mengmeng Yang, Juanjuan Huang, Wei Yang, Weiping Bai, Jie Bai, Er-xuan Ping; Changxin Memory Technologies, Inc, China
  • WE2P4-5 16:50 Cryogenic Operation of 3D Flash Memory for New Applications and Bit Cost Scaling with 6-Bit per Cell (HLC) and Beyond
    Yuta Aiba, Hitomi Tanaka, Takashi Maeda, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Toshio Fujisawa, Mie Matsuo, Tomoya Sanuki; Kioxia Corporation, Japan

Day 3 April 10th

• 09:00—09:45 Plenary 4: Thin Film Transistor Architectures for Advanced Analog Signal Processing
  Prof. Arokia Nathan, University of Cambridge, UK

• 09:45—10:30 Plenary 5: Ferroelectric-based device: revived as a low-power technology booster for diverse applications
  Prof. Ru Huang, Peking University, China

• 10:30—11:15 Plenary 6: Ubiquitous Computing Drives Future Semiconductor Technology
  Dr. Jeff Xu, HiSilicon Research, China

• 11:30—12:30 Session 9 TH1A1: Advanced Process Technology III

  • TH1A1-1 11:30 Smart Cut SiC Substrates for Manufacturing of High Quality Power Devices (Invited talk)
    Walter Schwarzenbach; SOITEC, France
  • TH1A1-2 11:50 Directed Self-Assembly of Block Copolymers for Microelectronic Manufacturing (Invited talk)
    Shisheng Xiong; Fudan University, China
  • TH1A1-3 12:10 Nanolithography to Beat the Diffraction Limit Using Ultrafast Laser (Invited talk)
    Xuanming Duan; Jinan University, China

• 11:30—12:30 Session 10 TH1A2: Flexible Devices

  • TH1A2-1 11:30 Flexible Semiconductor Device Technologies (Invited talk)
    Huilong Zhang, Tzu-Hsuan Chang, Seunghwan Min, Zhenqiang Ma; University of Wisconsin-Madison, USA
  • TH1A2-2 11:50 Personalized Medicinal Platform (Invited talk)
    Muhammad M. Hussain; King Abdullah University of Science and Technology, Saudi Arabia
  • TH1A2-3 12:10 Low-Voltage Synaptic Transistor Based on Polyvinylpyrrolidone Composite Electrolyte for Humidity Sensing
    Wenhui Fu¹, Jiang Dongliang¹ , He Liangchun¹ ,Yang Yaohua¹ , Chen Qi¹ , Zhang Jianhua², Li Jun¹; ¹Shanghai University, China, ²Ministry of Education, Shanghai University, China

• 11:30—12:30 Session 11 TH1A3: Emerging devices for in-memory and neuromorphic computing

  • TH1A3-1 11:30 A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
    Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Youri Popoff, Valeria Bragaglia, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein; IBM Zurich Research Laboratory, Switzerland
  • TH1A3-2 11:50 A Novel Leaky-FeFET Based True Random Number Generator with Ultralow Hardware Cost for Neuromorphic Application
    Tianyi Liu¹ , Jin Luo¹ , Xinming Wei¹ ,Qianqian Huang^1,2 , Ru Huang^1,2; ¹ Peking University, China, ²National Key Laboratory of Science and Technology on Micro/Nano Fabrication, China
  • TH1A3-3 12:10 Hf­1-xZrxO2 Based Bipolar Selector with High Uniformity and High Selectivity for Large-Scale Integration of Memristor Crossbars
    Caidie Cheng^1,2, Keqin Liu² , Bingjie Dang² , Liying Xu² , Zhen Yang² , Xiaoqin Yan¹, Yuchao Yang², Ru Huang²; ¹University of Science and Technology Beijing, China, ²Peking University, China

• 11:30—12:30 Session 12 TH1A4: The Photon Challenge:  No Longer Light Manufacturing

  • TH1A4-1 11:30 Silicon Nanophotonic Devices for On-chip Optical Modulation and Switching (Invited talk)
    Daoxin Dai , Lijia Song ,Bingchen Pan; Zhejiang University, China
  • TH1A4-2 11:50 Purcell effect and lasing from quantum dots in a topological photonic crystal nanocavity (Invited talk)
    Xin Xie^1,2, Weixuan Zhang^3,4, Xiaowu He⁵ , Huiming Hao⁵ , Haiqiao Ni⁵ , Zhichuan Niu⁵ , Xiangdong Zhang^3,4, Xiulai Xu^1,2,6; ¹Institute of Physics, Chinese Academy of Sciences, China, ²CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, China, ³School of Physics, Beijing Institute of Technology, China, ⁴School of Physics, Beijing Institute of Technology, China, ⁵Institute of Semiconductors Chinese Academy of Sciences, China, ⁶Songshan Lake Materials Laboratory, China
  • TH1A4-3 12:10 Manufacturing of State-of-The-Art InP-Based Photonic Integrated Circuits (Invited talk)
    Fred Kish; NCSU/Infinera

• 13:50—15:30 Session 13 TH2P1: Bio-MEMS/NEMS

  • TH2P1-1 13:50 Manipulation and Characterization of Human Cardiomyocytes for Drug Screening (Invited talk)
    Yu Sun; University of Tronto, Canada
  • TH2P1-2 14:10 Hydrogel Bioelectronics (Invited talk)
    Jian-Song Sheng¹, Yunfei Zhao¹, Yancong Qiao, Jiang Ling, Jun Fu, Yi Yang, Tian-Ling Ren; Tsinghua University, China
  • TH2P1-3 14:30 Shrink Polymer Micro Sensors for Detection of Water Pollutants (Invited talk)
    Tianhong Cui; University of Minnesota, USA
  • TH2P1-4 14:50 A Flexible Electroencephalography Electronic Skin Based on Graphene
    Ge Deng^1,2,Yan-cong Qiao¹ ,Ning-qin Deng¹ ,Xiao-shi Li¹ ,Qi Wu¹ ,Ying-fen Zeng^1,2, Si-fan Yang², Tian-Ling Ren¹; ¹Tsinghua University, China ²Graduate School at Shenzhen, Tsinghua University, China
  • TH2P1-5 15:10 Surface Modification to Improve the Electrochemical Performance of Neural Microelectrode Arrays
    Shuguang Yang, Yujie Yang, Liang Geng, George Adedokum, Dongcheng Xie, Ruichen Liu, Lei Xu; University of Science and Technology of China, China

• 13:50—15:30 Session 14 TH2P2: Photodetection and Display Technologies

  • TH2P2-1 13:50 Bionic Eye with Perovskite Nanowire Array Retina (Invited talk)
    Leilei Gu, Swapnadeep Poddar, Yuanjing Lin, Zhenghao Long, Daquan Zhang, Qianpeng Zhang, Lei Shu, Xiao Qiu, Matthew Kam, Zhiyong Fan; Hong Kong Univ. of Sci. and Tech, China
  • TH2P2-2 14:10 β-Ga2O3 Micro-Flake FET SBPD with Record Detectivity of 3.87×1017 Jones for Weak Light Detection
    Shunjie Yu¹ , Mengfan Ding¹ , Wenxiang Mu² , Zhitai Jia² , Xiaohu Hou¹ , Zhongfang Zhang¹ , Pengju Tan¹ , Xiaolong Zhao¹,Guangwei Xu¹ , Shibing Long¹; ¹University of Science and Technology of China, China; ²Shandong University, China
  • TH2P2-3 14:30 Large Area and Flexible Organic Active Matrix Image Sensor Array Fabricated by Solution Coating Processes at Low Temperature
    Xiao Hou¹, Wei Tang¹, Sujie Chen¹, Jianghu Liang², Hanyang Xu¹, Bang Ouyang¹, Ming Li¹, Yawen Song¹, Chun-chao Chen², Patrick Too³, Xiaoqing Wei⁴, Libo Jin⁴, Gang Qi⁵, Xiaojun Guo1; ¹School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, China, ²School of Material Science and Engineering, Shanghai Jiao Tong University, China, ³FlexEnable, UK, ⁴iRay Technology, China, ⁵Tianma Microelectronics, China
  • TH2P2-4 14:50 A Sensitive Vertical Standing Graphene/Silicon Schottky Photodetector to Angle Changes
    Ning-Qin Deng^1,4 , Zhen-Yi Ju¹, Ge Deng¹, Hou-Fang Liu¹, Xiang-Shun Geng¹ , Xiu-Feng Jia¹ , Jun Ren¹ , Tian-Zhong Yang² , Dan Xie¹ , Yi Yang¹ , He Tian¹, Tian-Ling Ren^1,3; ¹Tsinghua University, China, ²Chinese Academy of Sciences, China, ³Center for Flexible Electronics Technology, Tsinghua University, Beijing, China, ⁴National Institute of Metrology (NIM), Beijing, China
  • TH2P2-5 15:10 Ultra-High-Sensitivity Photodetector from Ultraviolet to Visible Based on GaDoped In2O3 Nanowire Phototransistor with Top-Gate Structure
    Wenhao Ran , Zhen Lou , Guozhen Shen; University of Chinese Academy of Sciences, China

• 13:50—15:30 Session 15 TH2P3: 2D materials and devices II

  • TH2P3-1 13:50 From the Top or Through the Edge: What is the Most Scalable Contact to 2D Semiconductors? (Invited talk)
    Aaron D. Franklin; Duke University, USA
  • TH2P3-2 14:10 Semiconductor Nanostructures for Optoelectronic and Energy Applications (Invited talk)
    Hoe Tan; Australian National University, Australia
  • TH2P3-3 14:30 Small-Hysteresis Flexible Carbon Nanotube Thin-Film Transistors Using Stacked Architecture
    Yun Sun¹, Dong-Sheng Zhu²,Yang Jian³ ,Chao Zang¹, Dong-Ming Sun¹; ¹Chinese Academy of Sciences, China, ²Shenyang Ligong Univ., China, ³Northeastern Univ. China
  • TH2P3-4 14:50 Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect
    Xiaohan Wu¹ , Ruijing Ge¹ , Yuqian Gu¹ , Emmanuel Okogbue² , Jianping Shi³ , Abhay Shivayogimath³ , Peter Bøggild⁴ , Timothy J. Booth⁴ , Yanfeng Zhang³ , Yeonwoong Jung² , Jack C. Lee¹, Deji Akinwande¹ ; ¹University of Texas at Austin, Austin, USA, ²University of Central Florida, USA, ³Peking University, China, ⁴Technical University of Denmark,Denmark
  • TH2P3-5 15:10 A Study of Materials Impacts on Graphene Electrostatic Discharge Switches
    Cheng Li, Mengfu Di, Zijin Pan, Albert Wang; University of California, Riverside, USA

• 13:50—15:30 Session 16 TH2P4: Advanced Packaging

  • TH2P4-1 13:50 Modeling for assessing Semiconductor Packages in High-Reliability Applications (Invited talk)
    Chris Bailey; University of Greenwich, UK
  • TH2P4-2 14:10 Fan-Out Wafer and Panel Level Packaging - A Platform for 3D Integration (Invited talk)
    Tanja Braun¹ ,Karl-Friedrich Becker¹ ,Michael Töpper¹ ,Rolf Aschenbrenner¹ ,Martin Schneider-Ramelow²; ¹Fraunhofer IZM, Germany, ²Technical University Berlin, Germany
  • TH2P4-3 14:30 Growth Behavior and Mechanism of Tin Whisker on Isolated SnAg Solder Under Compressive Stress
    Shuhui Chen , Xundi Zhang , Lingyue Tan ,Anmin Hu , Huiqin Ling , Ming Li, Tao Hang; Shanghai Jiao Tong University, China
  • TH2P4-4 14:50 Undercooling and Microstructure Analysis for the Design of Low Melting Point Solder
    Li Pu¹ , Yongjun Huo¹ , Xiuchen Zhao¹ , K. N. Tu² , Yingxia Liu¹; ¹ Beijing Institute of Technology, China, ²University of California, Los Angeles, USA
  • TH2P4-5 15:10 An Epoxy Composite Film for Modified Semi-Addictive Process
    Suibin Luo, Junyi Yu, Pengpeng Xu, Jie Liu, Shuhui Yu, Rong Sun, Yougen Hu; Chinese Academy of Sciences, China

• 15:50—17:30 Session 17 TH3P1: Advanced CMOS Technologies

  • TH3P1-1 15:50 Disruptive Technology Elements, and Rapid and Accurate Block-Level Performance Evaluation for 3nm and Beyond (Invited talk)
    M.H. Na¹, D. Jang¹, R. Baert¹, S. Sarkar¹, S. Patli¹, O. Zografos¹, B. Chehab¹, A. Spessot¹, G.Sisto², P. Schuddinck¹, H. Mertens¹ , Y.Oniki¹ , G. Hellings¹ , E. Dentoni Litta¹ , J. Ryckaert¹ , N.Horiguchi¹; ¹imec, Belgium, ²Cadence Design System, USA
  • TH3P1-2 16:10 Advanced CMOS Technologies for Ultra-Low Power Logic and AI Applications (Invited talk)
    Shinichi Takagi, Kasidit Toprasertpong, Kimihiko Kato, Kei Sumita , Eishin Nako , Ryosho Nakane, Kwang-won Jo^, Mitsuru Takenaka_;University of Tokyo, Japan
  • TH3P1-3 16:30 Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at Cryogenic Temperature
    Shohei Sekiguchi, Min-Ju Ahn , Takuya Saraya , Masaharu Kobayashi, Toshiro Hiramoto; University of Tokyo, Japan
  • TH3P1-4 16:50 Sub-3nm Transition-Metal Dichalcogenides FETs: Theoretical Insights into the Impacts of Layer Numbers and Channel Lengths
    Fei Wang, Xiaolei Ma, Wei Wei, Pengpeng Sang, Qianwen Wang, Weiqiang Zhang, Yuan Li, Jiezhi Chen; Shandong University, China
  • TH3P1-5 17:10 Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering
    Jingyi Ma¹, Ling Tong¹, Xiaojiao Guo¹, Xinyu Chen¹, Minxing Zhang¹, Chenjian Wu², Wenzhong Bao¹; ¹Fudan University, China, ²Soochow University, China

• 15:50—17:30 Session 18 TH3P2: GaN power devices

  • TH3P2-1 15:50 150 mm RF GaN Technology for Commercial RF Applications (Invited talk)
    B. Green, K. Moore, S. Klingbeil, C. Rampley, P. Renaud, D. Burdeaux, D. Hill, C. Zhu, J. Wan, K. Kim, C. Gaw, T. Arnold, F. Vanaverbeke, J. Finder; NXP Semiconductors, USA
  • TH3P2-2 16:10 Nearly Ideal Quasi-Vertical GaN Schottky Barrier Diode with 1010 High On/Off Ratio and Ultralow Turn on Voltage via Post Anode Annealing
    Jiabo Chen, Zhihong liu , Zhaoke Bian, haiyong Wang, Xiaoling Duan, Jing Ning, Jincheng Zhang, Yue Hao; Xidian University, China
  • TH3P2-3 16:30 A Novel Normally-Off Laterally Coupled p-GaN Gate HEMT
    Xing Wei^1,2, Xiaodong Zhang^1,2, Chi Sun^1,2, Wenxin Tang^1,2, Tao He² , Xuan Zhang², Guohao Yu², Liang Song² , Wenkui Lin^1,2, Yong Cai², Baoshun Zhang²; ¹University of Science and Technology of China, China, 2Suzhou Institute of Nano-Tech and Nano-Bionics, China
  • TH3P2-4 16:50 Reverse Conduction Induced Dynamic Ron Effect in GaN HEMT with p-GaN Gate
    Shaoyu Sun^1,2, Ling Xia³, Wengang Wu², Yufeng Jin^{1, 2}; ¹Peking University ShenZhen Graduate School, China, ²Peking University, China, ³Shenzhen Hai Li Technology Inc., China
  • TH3P2-5 17:10 3D GaN Power Switching Electronics: A Revival of Interest in ELO (Invited talk)
    Jia Wang^1,2, Hiroshi Amano², Ya-Hong Xie¹ ; ¹University of California, Los Angeles, USA, ²Nagoya University, Japan

• 15:50—17:30 Session 19 TH3P3: Modeling of Ferroelectronics

  • TH3P3-1 15:50 Variability Analysis for Ferroelectric Field-Effect Transistors
    Gihun Choe, Shimeng Yu; Georgia Institute of Technology, USA
  • TH3P3-2 16:10 Revisiting the Definition of Ferroelectric Negative Capacitance Based on Gibbs Free Energy
    Yuanyuan Zhang^1,2, Xueli Ma^1,2, Xiaolei Wang^1,2, Jinjuan Xiang^1,2, Wenwu Wang^1,2; ¹Institute of Microelectronics, Chinese Academy of Sciences, China, ²University of Chinese Academy of Sciences, China
  • TH3P3-3 16:30 Ferroelectric Based FETs and Synaptic Devices for Highly Energy Efficient Computational Technologies (Invited talk)
    D. Esseni, R. Fontanini, D. Lizzit, M. Massarotto, F. Driussi, M. Loghi; University of Udine, Italy
  • TH3P3-4 16:50 On the Critical Role of Ferroelectric Thickness for Negative Capacitance Transistor Optimization
    Om Prakash¹, Aniket Gupta^1,2, Girish Pahwa³, Yogesh S. Chauhan⁴, Hussam Amrouch⁵; ¹Karlsruhe Institute of Technology, Germany, ²National Institute of Technology Uttarakhand, India, ³University of California, Berkeley, USA, ⁴ Indian Institute of Technology Kanpur, India, ⁵ University of Stuttgart, Germany
  • TH3P3-5 17:10 Modelling and Design of FTJs as High Reading-Impedance Synaptic Devices
    R. Fontanini, M. Massarotto, R. Specogna, F. Driussi, M. Loghi, D. Esseni ; University of Udine, Italy

• 15:50—17:30 Session 20 TH3P4: Yield and Manufacturing

  • TH3P4-1 15:50 On-Chip Test Acceleration for Advanced Technologies (Invited talk)
    Shenzhi Yang, Fan Lan, Weiwei Pan, Ludan Yang, Yongjun Zheng; Semitronix Inc, China
  • TH3P4-2 16:10 Efficient Yield Analysis and Optimization with Transient Sensitivity Analysis (Invited talk)
    Zuochang Ye, Tsinghua University, China
  • TH3P4-3 16:30 Statistical Feature Extraction and Hybrid Feature Selection for Material Removal Rate Prediction in Chemical Mechanical Planarization Process
    Wenlan Jiang¹ , Chunpu Lv¹ , Bing Yang² , Fuquan Zhang² , Ying Gao² , Tao Zhang¹ , Huangang Wang¹; ¹Tsinghua University, China, ²Semiconductor Technology Innovation Center (Beijing) Crop, China
  • TH3P4-4 16:50 Maximizing Output from an Equipment Fleet in a Semiconductor Fab (Invited talk)
    Sanjiv Mittal, Haim Albalak, Chris Keith, Willian Nehrer; Applied Materials, USA
  • TH3P4-5 17:10 Thermal Atomic Layer Etching of Microelectronic Materials (Invited talk)
    Steven M. George; University of Colorado, USA

Day 4 April 11th

• 09:00—10:40 Session 21 FR1A1: Emerging Devices and Applications

  • FR1A1-1 9:00 Physics and Applications of Emerging Ferroelectric Devices (Invited talk)
    Masaharu Kobayashi; University of Tokyo, Japan
  • FR1A1-2 9:20 Dynamics Studies of Polarization Switching in Ferroelectric Hafnium Zirconium Oxide (Invited talk)
    X. Lyu¹ , M. Si¹ , P. R. Shrestha² , K. P. Cheung² ,P. D. Ye¹; ¹Purdue University, USA, ²National Institute of Standards and Technology, Gaithersburg, USA
  • FR1A1-3 9:40 Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
    Kaizhen Han, Subhranu Samanta, Chen Sun, Jishen Zhang, Zijie Zheng, Xiao Gong; National University of Singapore, Singapore
  • FR1A1-4 10:00 Tunable Random Number Generators Implemented by Spin-Orbit Torque Driven Stochastic Switching of a Nanomagnet for Probabilistic Spin Logic
    Shuai Zhang, Shihao Li, Xuecheng Zou, Jeongmin Hong, Long You; Huazhong University of Science and Technology, China
  • FR1A1-5 10:20 100 nm T-Gate GaN-On-Si HEMTs Fabricated with CMOS-Compatible Metallization for Microwave and mm-Wave Applications
    Hanlin Xie^1,2, Zhihong Liu³, Yu Gao¹ , Kenneth E. Lee¹ , Geok Ing Ng²; ¹Singapore-MIT Alliance for Research and Technology Centre, Singapore, ²Nanyang Technological University, Singapore , ³Xidian University, China

• 09:00—10:40 Session 22 FR1A2: Ga2O3, GaN power devices and Packaging trends

  • FR1A2-1 9:00 Ga2O3 Power Devices and How They Stand up to GaN and SiC (Invited talk)
    Huili Grace Xing; Cornell University, USA
  • FR1A2-2 9:20 Channel Mobility Properties of β-Ga2O3 MOSFETs on Si Substrate Fabricated by Ion-Cutting Process
    Yibo Wang,¹, Wenhui Xu,², Genquan Han,¹ Tiangui You,² Haodong Hu,¹ Yan Liu,¹ Hao Huang,² Xin Ou,² Xiaohua Ma,¹ Yue Hao¹; ¹Xidian University, China, ²Chinese Academy of Sciences, China
  • FR1A2-3 9:40 GaN Super-Heterojunction Schottky Barrier Diode with over 10 kV Blocking Voltage
    Sang-Woo Han , Jianan Song ,Rongming Chu; Pennsylvania State University, USA
  • FR1A2-4 10:00 High Density Packaging Trends Driven by Miniaturization of Home Appliance
    Yuquan Su, Jinqing Xu, Chi Zhang, Yasuhiro Koike; GD Midea Air-Conditioning Equipment Co., Ltd., China
  • FR1A2-5 10:20 Development of High-Frequency Ga2O3 Field-Effect Transistors (Invited talk)
    Masataka Higashiwaki; NICT, Japan

• 09:00—10:40 Session 23 FR1A3: Modeling of Transistors

  • FR1A3-1 9:00 L-UTSOI: Best In-Class Compact Modeling Solution for FD-SOI Technologies (Invited talk)
    Thierry Poiroux¹ , Sébastien Martinie¹ , Olivier Rozeau¹ , Michael Reiha² , Julien Arcamone¹; ¹MINATEC Campus, France, ²Univ. Grenoble Alpes, France
  • FR1A3-2 9:20 RF Linearity of SiGe HBT: Physics, Compact Modeling Using Mextram 505 and X-Parameter Based Measurements (Invited talk)
    Guofu Niu¹, Yiao Li¹, Xuewei Ding¹, Anni Zhang¹, Huaiyuan Zhang¹ Andries Scholten², Marnix Willemsen², Ralf Pijper², Luuk F. Tiemeijer²; ¹Auburn University, USA, ²NXP Semiconductors, The Netherlands
  • FR1A3-3 9:40 Evaluating the Impact of STI Recess Profile Control on Advanced FinFET Device Performance
    Qingpeng Wang, Yu De Chen, Rui Bao, Cheng Li, Jacky Huang, Joseph Ervin; Lam Research company, China
  • FR1A3-4 10:00 Multi-Physics Evaluation of Silicon Steep-Slope Cold Source FET
    Weizhuo Gan^1,5, Raphaël Prentki³ , Kun Luo¹ , Jiali Huo^1,5, Weixing Huang^1,5, Qiang Huo^1,5,Jianhui Bu⁵ , Ronggen Cao⁶ , Ye Lu² , Huaxiang Yin^1,5, Hong Guo³ , Zhenhua Wu^1,5; ¹Institute of Microelectronics, Chinese Academy of Sciences, China, ²School of Information Science and Technology, Fudan University, Shanghai, China, ³McGill University, Canada, ⁵University of Chinese Academy of Sciences, China, ⁶Department of materials, Fudan University, China
  • FR1A3-5 10:20 Enhanced On-State Current in Barrier-Free Carbon Heterojunction Tunneling Field-Effect Transistor
    Yu Zhu¹, Wenli Zhou^1,2, Li Cheng¹, Qingfeng Gong¹; ¹Huazhong University of Science and Technology, China ²Wuhan National Laboratory of Optoelectronics, China

• 09:00—10:40 Session 24 FR1A4: Electronic Materials

  • FR1A4-1 9:00 Current status of SiC bulk single crystal growth processes (Invited talk)
    Bing Gao; Wuhan University, China
  • FR1A4-2 9:20 Tailoring the electromechanical coupling in stretchable inorganic thin-film electronics (Invited talk)
    Yuan Lin; University of Electronic Science and Technology of China, China
  • FR1A4-3 9:40 Synaptic Plasticity in Novel Non-Volatile FET with Amorphous Gate Insulator Enabled by Oxygen Vacancy Related Dipoles
    Guoqing Zhang¹ , Yue Peng¹, Wenwu Xiao^{1, 2}, Fenning Liu¹ , Yan Liu¹ , Genquan Han¹, Yue Hao¹; ¹Xidian University, China, ²Xi’an UniIC Semiconductors, China
  • FR1A4-4 10:00 Selecting and Optimizing Threshold Switching Materials and Devices for Stochastic Neuron
    Kuan Wang, Qing Hu, Qi Lin, Dayou Zhang, Yuhui He, Hao Tong, Xiangshui Miao; Huazhong University of Science and Technology, China
  • FR1A4-5 10:20 High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature
    Qi Li, Junchen Dong, Dedong Han, Xing Zhang, Yi Wang; Peking University, China

• 11:00—12:40 Session 25 FR2A1: CMOS Characterization Technologies

  • FR2A1-1 11:00 Low Frequency Noise: A Show Stopper for State-Of-The-Art and Future Si, Ge-Based and III-V Technologies (Invited talk)
    C. Claeys¹ , A. Oliviera² , A. Veloso³ , L. He⁴ , K. Takakura⁵ , V. Putcha³ , H. Amimura³ , E. Simoen³; ¹KU Leuven, Belgium ²Universidade Tecnológica Federal do Paraná (UTFPR) , Brazil, ³Imec, Belgium, ⁴Xidian University, China, ⁵National Institute of Technology (KOKEN), Kumamoto College, Japan
  • FR2A1-2 11:20 A Review of Recent MOSFET Source and Drain Resistances Extraction Methods Using a Single Test Device (Invited talk)
    Adelmo Ortiz-Conde¹, Manuel A. Quevedo-Lopez²; ¹Universidad Simón Bolívar,Venezuela,²University of Texas at Dallas, USA
  • FR2A1-3 11:40 White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling
    K. Ohmori, S. Amakawa; Device Lab Inc., Japan
  • FR2A1-4 12:00 MOSFET C-V Characteristics Extraction Based on Ring Oscillator with Addressable DUTs
    Zhen Zhou¹ , Junxu Wu² , Changfeng Wang² , Ganbing Shang² , Xiaojin Li¹ , Yabin Sun¹ , Yanling Shi¹; ¹East China Normal University, China, ²Shanghai Huali Microelectronics Corporation, China
  • FR2A1-5 12:20 Performance Trade-Offs in Complementary FET (CFET) Device Architectures for 3nm-Node and Beyond
    Xiaoqiao Yang¹ , Yabin Sun¹, Ziyu Liu², Yanling Shi¹, Xiaojin Li¹; ¹East China Normal University, China, ²Fudan University, China

• 11:00—12:40 Session 26 FR2A2: Group IV power devices

  • FR2A2-1 11:00 Phonon Properties of Group IV Materials for Thermoelectric Applications (Invited talk)
    Atsushi Ogura^{1, 2}, Ryo Yokogawa^{1, 2}; ¹School of Science and Technology, Meiji University, Japan ²Meiji Renewable Energy Laboratory, Meiji University, Japan
  • FR2A2-2 11:20 Progress and Future Challenges of SiC Power MOSFETs (Invited talk)
    Tsunenobu Kimoto; Kyoto University, Japan
  • FR2A2-3 11:40 Novel Ultralow On-Resistance Accumulation-Mode LDMOS with Integrated Diodes
    Jie Wei, Zhen Ma, Congcong Li, Kaiwei Dai, Xiaorong Luo, Bo Zhang; University of Electronic Science and Technology of China, China
  • FR2A2-4 12:00 Process Improvement for Stabilizing the VLD Effective Dose of 4500V Trench-Gated IGBT Platform
    Rui Jin¹, Li Li¹, Kui Pu², Jun Zeng^2,3, Longlai Xu² , Xiaohu Deng⁴, Pan Yin⁴, Yaohua Wang¹, Wenhong Zhang², Mohamed N. Darwish^2,3; ¹Global Energy Interconnection Research Institute co., Ltd.,China, ²MaxPower Semiconductor Inc., China, ³ MaxPower Semiconductor Inc., USA,⁴China Resource Microelectronics Limited, China
  • FR2A2-5 12:20 Accurate TCAD Simulation of Trench-Gate IGBTs and Its Application to Prediction of Carrier Lifetime Requirements for Future Scaled Devices (Invited talk)
    M. Watanabe¹ , N. Shigyo¹ , T. Hoshii¹ , K. Furukawa¹ , K. Kakushima¹ , K. Satoh² , T. Matsudai³ , T. Saraya⁴ , T. Takakura⁴ , I. Muneta¹ , H. Wakabayashi¹ , A. Nakajima⁵ , S. Nishizawa⁶ , K. Tsutsui¹ , T. Hiramoto⁴ , H. Ohashi¹ , H. Iwai1; ¹Tokyo Institute of Technology, Japan, ²Mitsubishi Electric Corp., Japan, ³Toshiba Electronic Devices & Storage Corp., Japan, ⁴University of Tokyo, Japan, ⁵Nat. Inst. Advanced Industrial Science and Technology, Japan,⁶Kyushu University, Japan

• 11:00—12:40 Session 27 FR2A3: Modeling of Memory, Quantum, and TFT

  • FR2A3-1 11:00 A Compact Model of Analog RRAM Considering Temperature Coefficient for Neural Network Evaluation
    Minghong Xu¹, Bin Gao¹, Feng Xu¹, Wei Wu¹, Jianshi Tang¹, Jiezhi Chen², He Qian¹; ¹Tsinghua University, China, ²Shandong University, China
  • FR2A3-2 11:20 Development of Integrated Device Simulator for Quantum Bit Design: Self-Consistent Calculation for Quantum Transport and Qubit Operation
    Hidehiro Asai, Shota Iizuka, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Kimihiko Kato, Hiroyuki Ota, Takahiro Mori; National Institute of Advanced Industrial Science and Technology (AIST), Japan
  • FR2A3-3 11:40 Designing EDA-Compatible Cryogenic CMOS Platform for Quantum Computing Applications
    Zewei Wang¹ , Chengwei Cao² , Puqing Yang^1,3, Yumeng Yuan¹ , Zhidong Tang¹ , Renhe Chen¹ , Weican Wu² , Xin Luo² , Ao Guo² , Liujiang Yu⁴ , Ganbing Shang⁴ , Zhaofeng Zhang³ , Shaojian Hu² , Xufeng Kou¹; ¹ShanghaiTech University, China, ²Shanghai IC Research and Development Center, China, ³Chinese Academy of Sciences, China, ⁴Huali Microelectronics Corporation (HLMC), China
  • FR2A3-4 12:00 Compact Modeling of Organic and IGZO TFTs from 150K to 350K (Invited talk)
    Benjamin Iñiguez¹ , Harold Cortés-Ordóñez¹ , Gérard Ghibaudo² , Antonio Cerdeira³ , Magali Estrada³ ; ¹University Rovira i Virgili, Spain, ²MINATEC/INPG ,France, ³CINVESTAV, Mexico
  • FR2A3-5 12:20 Compact Physics-Based Charge Core Model for CAAC In-Ga-Zn Oxide Multi-Gate FETs
    Slobodan Mijalkovic¹, Bogdan Tudor¹, Makoto Watanabe¹, Hitoshi Kunitake², Takayuki Ikeda², Shunpei Yamazaki²; ¹Silvaco, Inc., USA^{, 2}Semiconductor Energy Laboratory Co., Japan

• 11:00—12:40 Session 28 FR2A4: RF reliability and Power electronics reliability

  • FR2A4-1 11:00 RF Silicon Technologies and Its Reliability for Sub-6GHz and mmWave 5G Applications (Invited talk)
    P. Srinivasan; GLOBALFOUNDRIES Inc., USA
  • FR2A4-2 11:20 Re-Consideration of Influence of Fluorine on SiO2 and SixNy Reliabilities (Invited talk)
    Yuichiro Mitani; Tokyo City University, Japan
  • FR2A4-3 11:40 ESD Co-Design of mm-Wave RF Switch in 22nm SOI
    Feilong Zhang, Cheng Li, Mengfu Di, Zijin Pan, Han Wang, Albert Wang; University of California, Riverside, USA
  • FR2A4-4 12:00 Experimental Understanding of the Impact of Channel Percolation on Low Frequency Noise Using Transient Enhanced Diffusion of Channel Dopants
    Shuntaro Fujii, Soichi Morita, Tsutomu Miyazaki; Asahi Kasei Microsystems, Japan
  • FR2A4-5 12:20 Design for Reliability based on Customer Obsession (Invited talk)
    Owen Liu; Amazon Corp., Product Integrity, China

• 14:00—15:40 Session 29 FR3P1: Advanced Process Technology I

  • FR3P1-1 14:00 Nanosheet FETs and Their Potential for Enabling Continued Moore's Law Scaling (Invited talk)
    A. Veloso, G. Eneman, A. De Keersgieter, D. Jang, H. Mertens, P. Matagne, E. Dentoni Litta, J. Ryckaert, N. Horiguchi; Imec, Belgium
  • FR3P1-2 14:20 Technology Trends in 2.5D/3D Packaging and Heterogeneous Integration (Invited talk)
    Masaya Kawano ; Institute of Microelectronics, A*STAR, Singapore
  • FR3P1-3 14:40 Optimization of Contact W Related Processes for 28/22 nm HKMG Technology Node
    Hai-Jin Lu, Zong-Yan Pan, Pei-Yu Chen, Zhi-Cheng Zhang, Ming-Zhi Chen; Shanghai Huali Microelectronics Corporation, China
  • FR3P1-4 15:00 Formation Mechanism of a Rounded SiGe-Etch-Front in an Isotropic Dry SiGe Etch Process for Gate-All-Around (GAA)-FETs
    Yu Zhao, Taku Iwase, Makoto Satake, Hirotaka Hamamura; Hitachi, Ltd., Japan
  • FR3P1-5 15:20 Optimization of Bump Defect at High-Concentration In-Situ Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application
    Dongxue Zhao^1,2,3, Zhiliang Xia^1,2,3, Linchun Wu³ , Tao Yang^1,2,3, Dongyu Fan^1,2,3, Yuancheng Yang³ , Lei Liu³ , Wenxi Zhou³ , Zongliang Huo^1,2,3; ¹Institute of Microelectronics of the Chinese Academy of Sciences, China, ²University of Chinese Academy of Sciences, China, ³Yangtze Memory Technologies Company, Ltd., China

• 14:00—15:40 Session 30 FR3P2: Materials and Designs for Wearable Sensing

  • FR3P2-1 14:00 Flexible and Wearable Sensing Electronics (Invited talk)
    Ting Zhang; Suzhou Institute of Nano‐Tech and Nano‐Bionics, China
  • FR3P2-2 14:20 Emerging Designs for Polymer-Based Optoelectronics and Energy Storage (Invited talk)
    Tse Nga Ng; University of Califonria San Diego, USA
  • FR3P2-3 14:40 Highly Stable Fibrous Solid-State Ag/AgCl Reference Electrode
    Chaochao Shen, Xin Xi, Wei Tang, Xiaojun Guo, Ruili Liu; Shanghai Jiao Tong University, China
  • FR3P2-4 15:00 Fabrication of Highly Sensitive Flexible Tactile Sensor with Hierarchical Microstructures for Wearable Electronics
    Qifeng Du¹, Ying Chen^1,2, Zhijian Wang¹ , Jun Ai¹ , Baicheng Zhang¹ , Lanlan Liu¹ , Xue Feng³; ¹Institute of Flexible Electronics Technology of THU, China. ²Qiantang Science and Technology Innovation Center, China,³Tsinghua University, China
  • FR3P2-5 15:20 Printed Stretchable Multifunctional E-Textile for Wearable Electronics
    Bin Tian, Wei Wu; Wuhan University, China

• 14:00—15:40 Session 31 FR3P3: Neural network circuits and systems

  • FR3P3-1 14:00 Implementation, Operation and Applications of Memristive Neural Networks (Invited talk)
    Qiangfei Xia; University of Massachusetts, USA
  • FR3P3-2 14:20 In-memory computing with memristor content addressable memory circuits (Invited talk)
    Catherine Graves; HP Labs, USA
  • FR3P3-3 14:40 A Neural Network-Based Harmonic Suppression Algorithm for Medium-To-High Resolution ADCs (Invited talk)
    Xizhu Peng¹, Yihang Mi¹ , Yunfan Zhang¹ , Yao Xiao¹ , Wei Zhang¹ , Yong Tang¹ , He Tang^1,2; ¹ University of Electronic Science and Technology of China, China, ²Guangdong Institute of electronic information engineering, University of Electronic Science and Technology of China, China
  • FR3P3-4 15:00 Artificial Neuron with Spike Frequency Adaptation Based on Mott Memristor
    Qiumeng Wei¹, Jianshi Tang^1,2, Xinyi Li¹, Yanan Zhong¹, Bin Gao^1,2, He Qian^1,2, Huaqiang Wu^1,2; ¹Institute of Microelectronics, Tsinghua University, China, ²Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, China
  • FR3P3-5 15:20 Associative Learning Circuit Based on Synaptic Transistors with Temporal Dynamics
    Chang Liu, Zhaokun Jing, Yuchao Yang, Ru Huang; Peking University, China

• 14:00—15:40 Session 32 FR3P4: Applications for Machine Learning in Semiconductor Manufacturing

  • FR3P4-1 14:00 Applications of AI Technologies in Flash Memory Business (Invited talk)
    Ryohei Orihara; Digital Process Innovation Center Kioxia Corporation, Japan
  • FR3P4-2 14:20 Applications for Machine Learning in Semiconductor Manufacturing and Test (Invited talk)
    Chen He¹ , Hanbin Hu² , Peng Li²; ¹NXP Semiconductors, Austin, USA, ²University of California at Santa Barbara, USA
  • FR3P4-3 14:40 Machine Learning Approaches Optimizing Semiconductor Manufacturing Processes (Invited talk)
    Tsuyoshi Moriya; Tokyo Electron Limited, Japan
  • FR3P4-4 15:00 Applications for Machine Learning in Semiconductor Manufacturing (Invited talk)
    Richard Burch, Luke Merrick, Qing Zhu, Tomonori Honda, Jeff David; PDF Solutions, USA
  • FR3P4-5 15:20 Improving accuracy and cycle-time in computational lithography with Machine Learning (Invited talk)
    Shibing Wang; ASML, Netherlands

• 16:00—17:40 Session 33 FR4P1: Advanced Process Technology II

  • FR4P1-1 16:00 Sputtering Growth of Metal Oxynitride Semiconductors for Excitonic Devices (Invited talk)
    Ryota Narishige , Naho Itagaki, Masaharu Shiratani; Kyushu Univ.,Japan
  • FR4P1-2 16:20 Growth of Ferroic Metal Oxide Films with Desired Properties by Polymer-Assisted Deposition (Invited talk)
    Samyak Dhole, Quanxi Jia; University at Buffalo – The State University of New York, USA
  • FR4P1-3 16:40 Effect of Low Temperature Annealing on PN Junction Formation Using Si Paste
    Huan Zhu¹, Yusuke Kuboki¹, Morihiro Sakamoto¹, Yoshimine Kato²; ¹Department of Automotive Science, Kyushu University, Japan, ²Faculty of Engineering, Kyushu University, Japan
  • FR4P1-4 17:00 Optimization of Tilted Profile in Ultra-High Aspect Ratio Etch Process for 3D NAND Flash Memory
    Jinqing He^1,2,3, Zhiliang Xia^1,2,3, Meng Wang³, Guangxuan Zhang³ , Haiqing Dou³ , Zongliang Huo^1,2,3; ¹ University of Chinese Academy of Sciences, China, ²Institute of Microelectronics of the Chinese Academy of Sciences, China,³Yangtze Memory Technologies Company, Ltd.,China
  • FR4P1-5 17:20 Forming Low-Resistivity Tungsten Contacts and Avoiding Fluorine Diffusion by Flash Lamp Annealing (FLA)
    Shogo Shigemasu, Hideaki Tanimura, Hikaru Kawarazaki, Shinichi Kato; SCREEN Semiconductor Solutions Co. Ltd., Japan

• 16:00—17:40 Session 34 FR4P2: Flexible and Stretchable Systems

  • FR4P2-1 16:00 Artificial synapses and sensorimotor nerves (Invited talk)
    Wentao Xu; Nankai University, China
  • FR4P2-2 16:20 Rubbery electronics and integrated systems (Invited talk)
    Cunjiang Yu; University of Houston, USA
  • FR4P2-3 16:40 Printed conformable electronics for body-worn sensors and systems (Invited talk)
    Matti Mäntysalo; Tampere University, Finland
  • FR4P2-4 17:00 FMM Free Organic and Hybrid Electronics Manufacturing Enabled by Photolithography (Invited talk)
    Tung-Huei Ke¹, Calvin Mona Sandehang^1,2, Chi-Ting Tsai^1,3, Gema Molina Alvarez¹ , Erwin Vandenplas¹ , Paul Heremans^1,2, Pawel E. Malinowski¹; ¹imec, Belgium, ²KU Leuven., Belgium, ³National Cheng Kung Univ., Belgium
  • FR4P2-5 17:20 Semi-Disposable Self-Adhesive Sensor System for Wearable Electrocardiogram Detection
    Fangran Bian, Sujie Chen, Ming Li, Yishen Pei, Xiaojun Guo; Shanghai Jiao Tong University, China

• 16:00—17:40 Session 35 FR4P3: Neuromorphic and quantum computing

  • FR4P3-1 16:00 Wafer-scale integration of 2D materials in high-density memristive crossbar arrays for artificial neural networks (Invited talk)
    Mario Lanza; King Abdullah University of Science and Technology, SAU
  • FR4P3-2 16:20 Metal-oxide memristors for Sensory applications (Invited talk)
    Themis Prodromakis, University of Southampton, UK
  • FR4P3-3 16:40 Ge/Si Quantum Wires for Quantum Computing (Invited talk)
    Fei Gao¹ , Jie-Yin Zhang¹ , Jian-Huan Wang¹ , Ming Ming¹ , Ting Wang¹ , Jian-Jun Zhang¹ , Hannes Watzinger² , Josip Kukučka² , Lada Vukušić² , Georgios Katsaros² , Ke Wang³ , Gang Xu³ , Hai-Ou Li³ , Guo-Ping Guo³; ¹Institute of Physics, Chinese Academy of Sciences, China, ²Institute of Science and Technology,Austria, ³University of Science and Technology of China, China
  • FR4P3-4 17:00 Convertible Volatile and Non-Volatile Resistive Switching in a Self-Rectifying Pt/TiOx/Ti Memristor
    Zuheng Wu^1,2, Xumeng Zhang^1,2,4, Tuo Shi^1,2,3, Yongzhou Wang¹, Rui Wang^1,2, Jian Lu¹, Jinsong Wei¹, Peiwen Zhang¹ , Qi Liu^1,2,3,4; ¹Institute of Microelectronics of Chinese Academy of Sciences, China; ²University of Chinese Academy of Sciences, China; ³Zhejiang Laboratory, China. ⁴Fudan University, China
  • FR4P3-5 17:20 Brain-Like Networks in Random Memristor Array Based on FORCE Training
    Xumeng Zhang¹, Zuheng Wu², Rui Wang², Jian Lu², Jinsong Wei², Qi Liu¹, Ming Liu^1,2; ¹Fudan University, China, ²Institute of Microelectronics of Chinese Academy of Sciences, China

• 16:00—17:40 Session 36 FR4P4: Novel Materials and Devices:  Challenges and Opportunities in Semiconductor Manufacturing

  • FR4P4-1 16:00 Integration of Resistive Switching Memory on Advanced Technology Nodes (Invited talk)
    Xiaoxin Xu; Institute of Microelectronics, CAS, China
  • FR4P4-2 16:20 Manufacture and Characterization of Ultrathin Flexible Chips (Invited talk)
    Kunwei Zheng¹ , Shisheng Caⁱ¹ , Ying Chen^{2, 3}, Yinji Ma¹ , Xue Feng¹; ¹Tsinghua University, China,²Institute of Flexible Electronics Technology of THU, China, ³Qiantang Science and Technology Innovation Center, China
  • FR4P4-3 16:40 Unified Compact Modeling of Charge Trapping in 1/f Noise, RTN and BTI (Invited talk)
    Gilson Wirth¹ , Mauricio B. da Silva² , Thiago H. Both³; ¹Electrical Eng. Dept., UFRGS, Brazil, ²UFSM, Dept. of Electronics and Comp., Brazil, ³UFPel, Centro de Engenharias, Brazil
  • FR4P4-4 17:00 Engineered substrate as a fast track to technology performance (Invited talk)
    Christophe Maleville; Soitec, France
  • FR4P4-5 17:20 Thermoelectric and Photoelectric Effects of 2D Bismuth for Flexible Electronics
    Zhengrui Zhu^1,2, Siyao Jiang¹, Wen Zhong¹, Zhaoying Dang¹, Jiayi Chen¹, Beibei Zhu¹, Li Tao^1,2; ¹School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, ²Center for 2D Materials, Southeast University, Nanjing, China